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PDF MTP2402Q8 Data sheet ( Hoja de datos )

Número de pieza MTP2402Q8
Descripción P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes CYStech Electronics 
Logotipo CYStech Electronics Logotipo



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No Preview Available ! MTP2402Q8 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C566Q8
Issued Date : 2012.06.12
Revised Date :
Page No. : 1/8
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP2402Q8
BVDSS
ID
RDSON@VGS=-10V, ID=-7A
RDSON@VGS=-4.5V,ID=-4.5A
RDSON@VGS=-2.5V,ID=-2A
-20V
-8.3A
22mΩ(typ)
27mΩ(typ)
35mΩ(typ)
Description
The MTP2402Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating package
Equivalent Circuit
MTP2402Q8
Outline
SOP-8
GGate SSource DDrain
Ordering Information
Device
MTP2402Q8
Package
SOP-8
(Pb-free lead plating package)
Shipping
2500 pcs/ Tape & Reel
Marking
2402
MTP2402Q8
CYStek Product Specification
http://www.Datasheet4U.com

1 page




MTP2402Q8 pdf
CYStech Electronics Corp.
Spec. No. : C566Q8
Issued Date : 2012.06.12
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
70
-VDS=5V
60
50
100
10
40
1
30
20 0.1
10
0
012
3 45
-VGS, Gate-Source Voltage(V)
0.01
0.001
1
D=0.5
Transient Thermal Response Curves
Forward Transfer Admittance vs Drain Current
VDS=-5V
Ta=25°C
Pulsed
0.01 0.1
1
-ID, Drain Current(A)
10
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTP2402Q8
CYStek Product Specification

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