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AT25DF021 데이터시트 PDF




Adesto Technologies에서 제조한 전자 부품 AT25DF021은 전자 산업 및 응용 분야에서
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PDF 형식의 AT25DF021 자료 제공

부품번호 AT25DF021 기능
기능 2-Megabit 2.3-volt or 2.7-volt Minimum SPI Serial Flash Memory
제조업체 Adesto Technologies
로고 Adesto Technologies 로고


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AT25DF021 데이터시트, 핀배열, 회로
Features
Single 2.3V - 3.6V or 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
66 MHz Maximum Operating Frequency
– Clock-to-Output (tV) of 6 ns Maximum
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
Individual Sector Protection with Global Protect/Unprotect Feature
– Four Sectors of 64 Kbytes Each
Hardware Controlled Locking of Protected Sectors via WP Pin
128-Byte Programmable OTP Security Register
Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 450 ms Typical 64-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
– 7 mA Active Read Current (Typical at 20 MHz)
– 15 μA Deep Power-Down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil Wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
2-Megabit
2.3-volt or
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF021
(Not Recommended
for New Designs)
1. Description
The AT25DF021 is a serial interface Flash memory device designed for use in a wide
variety of high-volume consumer based appl ications in which program code is shad-
owed from Flash memory into embedded or external RAM for execution. The flexible
erase architecture of the AT25DF021, with its erase granularity as small as 4 Kbytes,
makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.
3677F–DFLASH–5/2013
http://www.Datasheet4U.com




AT25DF021 pdf, 반도체, 판매, 대치품
Figure 2-1. 8-SOIC Top View
CS
SO
WP
GND
1
2
3
4
8 VCC
7 HOLD
6 SCK
5 SI
Figure 2-2.
8-UDFN (Top View)
CS 1
SO 2
WP 3
GND 4
8 VCC
7 HOLD
6 SCK
5 SI
3. Block Diagram
Figure 3-1. Block Diagram
CS
SCK
SI
SO
WP
HOLD
INTERFACE
CONTROL
AND
LOGIC
CONTROL AND
PROTECTION LOGIC
Y-DECODER
X-DECODER
I/O BUFFERS
AND LATCHES
SRAM
DATA BUFFER
Y-GATING
FLASH
MEMORY
ARRAY
4. Memory Array
To provide the greatest flexibility, the memory array of the AT25DF021 can be erased in four lev-
els of granularity including a full chip erase. In addition, the array has been divided into physical
sectors of uniform size, of which each sector can be individually protected from program and
erase operations. The size of the physical sectors is optimized fo r both code and data storage
applications, allowing both code and data segments to reside in their own isolated regions. The
Memory Architecture Diagram illustrates the breakdown of each erase level as well as the
breakdown of each physical sector.
4 AT25DF021
3677F–DFLASH–5/2013

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AT25DF021 전자부품, 판매, 대치품
Table 6-1. Command Listing
Command
Read Commands
Read Array
Program and Erase Commands
Block Erase (4 Kbytes)
Block Erase (32 Kbytes)
Block Erase (64 Kbytes)
Chip Erase
Byte/Page Program (1 to 256 Bytes)
Protection Commands
Write Enable
Write Disable
Protect Sector
Unprotect Sector
Global Protect/Unprotect
Read Sector Protection Registers
Security Commands
Program OTP Security Register
Read OTP Security Register
Status Register Commands
Read Status Register
Write Status Register
Miscellaneous Commands
Read Manufacturer and Device ID
Deep Power-Down
Resume from Deep Power-Down
AT25DF021
Opcode
Clock
Frequency
Address
Bytes
Dummy
Bytes
Data
Bytes
0Bh 0000 1011 Up to 66 MHz
03h 0000 0011 Up to 33 MHz
3
3
1 1+
0 1+
20h 0010 0000 Up to 66 MHz
52h 0101 0010 Up to 66 MHz
D8h 1101 1000 Up to 66 MHz
60h 0110 0000 Up to 66 MHz
C7h 1100 0111 Up to 66 MHz
02h 0000 0010 Up to 66 MHz
3
3
3
0
0
3
00
00
00
00
00
0 1+
06h 0000 0110 Up to 66 MHz
0
0
04h 0000 0100 Up to 66 MHz
0
0
36h 0011 0110 Up to 66 MHz
3
0
39h 0011 1001 Up to 66 MHz
3
0
Use Write Status Register Command
3Ch 0011 1100 Up to 66 MHz
3
0
0
0
0
0
1+
9Bh 1001 1011 Up to 66 MHz
77h 0111 0111 Up to 66 MHz
3
3
0 1+
2 1+
05h 0000 0101 Up to 66 MHz
01h 0000 0001 Up to 66 MHz
0
0
0 1+
01
9Fh 1001 1111 Up to 66 MHz
B9h 1011 1001 Up to 66 MHz
ABh 1010 1011 Up to 66 MHz
0
0
0
0 1 to 4
00
00
3677F–DFLASH–5/2013
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부품번호상세설명 및 기능제조사
AT25DF021

2-Megabit 2.3-volt or 2.7-volt Minimum SPI Serial Flash Memory

Adesto Technologies
Adesto Technologies

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