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PDF FDS6984AS Data sheet ( Hoja de datos )
| Número de pieza | FDS6984AS | |
| Descripción | Dual Notebook Power Supply N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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J
May 2008
FDS6984AS
Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6 984AS is designed t o replace t wo single
SO-8 MOS FETs and Schottk y diode in s ynchronous
DC:DC p ower supplies that prov ide various perip heral
voltages for not ebook computer s and oth er battery
powered electro nic devices . FDS6984AS contains tw o
unique 30V, N-channel, logic level, PowerT rench
MOSFETs designed to maximi ze pow er conversion
efficiency.
The high-side sw itch ( Q1) is designed w ith sp ecific
emphasis on reducing sw itching losse s w hile th e low -
side sw itch (Q2 ) is optimized t o reduce condu ction
losses. Q2 also includes a pate nted combination of a
MOSFET mono lithically integrat ed w ith a Schottk y
diode.
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky diode
8.5A, 30V
RDS(on) max= 20 mΩ @ VGS = 10V
RDS(on) max= 28 mΩ @ VGS = 4.5V
• Q1: Optimized for low switching losses
Low gate charge (8nC typical)
5.5A, 30V
RDS(on) max= 31 mΩ @ VGS = 10V
RDS(on) max= 40 mΩ @ VGS = 4.5V
• RoHS Compliant
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Sou
rce Voltage
VGSS Gate-S
ource Voltage
ID Drain Current - Continuous
- Pulsed
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a) 8.5
(Note 1a) 1.6
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6984AS FDS6984AS
13”
5
6 Q1
7
Q2
8
4
3
2
1
Q2 Q1
30 30
±20 ±20
5.5
30 20
2
1
0.9
–55 to +150
Units
V
V
A
W
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6984AS Rev A1(X)
http://www.Datasheet4U.com
1 page  
Typical Characteristics: Q2
10
ID =8.5A
8
6
4
VDS = 10V
20V
15V
2
0
024
68 10 12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
800
f = 1MHz
VGS = 0 V
600
Ciss
400
Coss
200
Crss
0
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
FDS6984AS Rev A1 (X)
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDS6984AS.PDF ] | |
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