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부품번호 FGH40N120AN 기능
기능 1200V NPT IGBT
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FGH40N120AN 데이터시트, 핀배열, 회로
FGH40N120AN
1200V NPT IGBT
July 2008
IGBT®
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
•R oHS complaint
Applications
Induction Heating, U PS, AC & D C motor controls and general
purpose inverters.
Description
Employing NPT technolo gy, Fairchild’s AN series of IGBTs pro-
vides low conduction and switching losses. The AN series offers
an solution for application such as indu ction heating (IH), motor
control, ge neral pur pose inverter s and un interruptible pow er
supplies (UPS).
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGES
IC
ICM(1)
PD
SCWT
TJ
TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@TC = 25°C6
@TC = 100°C4
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
VCE = 600V, VGE = 15V, TC = 125°C
Operating Junction Temperature
@TC = 25°C
@TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGH40N120AN
1200
±25
4
0
160
417
167
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
µs
°C
°C
°C
Typ.
--
--
Max.
0.3
40
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGH40N120AN Rev. A2
1
www.fairchildsemi.com
http://www.Datasheet4U.com




FGH40N120AN pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
6000
5000
4000
3000
Ciss
Common Emitter
V = 0V, f = 1MHz
GE
T = 25°C
C
Figure 8. Turn-On Characteristics vs. Gate
Resistance
100
tr
2000
1000
Coss
Crss
0
1 10
Collector-Emitter Voltage, V [V]
CE
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
10
0
td(on)
Common Emitter
V = 600V, V = ±15V
CC GE
I = 40A
C
T = 25°C
C
T = 125°C
C
10 20 30 40 50 60 70
Gate Resistance, R []
G
Figure 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 600V, V = ±15V, I = 40A
CC GE C
T = 25°C
C
T = 125°C
C
td(off)
Common Emitter
V = 600V, V = ±15V
CC GE
I = 40A
C
10
T = 25°C
C
T = 125°C
C
Eon
100
tf
Eoff
1
10
0
10 20 30 40 50 60 70
Gate Resistance, R []
G
Figure 11. Turn-On Characteristics vs.
Collector Current
0 10 20 30 40 50 60 70
Gate Resistance, R []
G
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
V = ±15V, R = 5
GE G
100
T = 25°C
C
T = 125°C
C
tr
Common Emitter
V = ±15V, R = 5
GE G
T = 25°C
C
T = 125°C
C
td(off)
100
td(on)
10
tf
20 30 40 50 60 70 80
Collector Current, I [A]
C
20 30 40 50 60 70 80
Collector Current, I [A]
C
FGH40N120AN Rev. A2
4
www.fairchildsemi.com

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FGH40N120AN 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
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Build it Now™
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FACT Quiet Series™
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FAST®
FastvCore™
FPS™
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OPTOLOGIC®
OPTOPLANAR®
®
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STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
TinyPWM™
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µSerDes™
UHC®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELI ABILITY, FUNCTION, OR DESI GN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISIN G OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CI RCUIT DESCRIBED HEREI N; NEITHER DOES IT CONVEY ANY L ICENSE
UNDER ITS PATENT R IGHTS, NOR THE RI GHTS OF OTH ERS. THESE SPEC IFICATIONS DO N OT EX PAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERM S AND COND ITIONS, SPECIFICALLY THE WARRANTY THER EIN, WHIC H COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCT S ARE NOT AUTH ORIZED FOR USE AS CRITICAL COMPON ENTS IN LIF E SU PPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems a re devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, a nd (c) whose failure to perform
when properly used in accor dance with instructions for use
provided in the labeling, canbe reasonably expected to result
in a significant injury to the user.
2. A cr itical comp onent in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cau se the failur e of the life sup port device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
FGH40N120AN Rev. A2
7
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관련 데이터시트

부품번호상세설명 및 기능제조사
FGH40N120AN

1200V NPT IGBT

Fairchild Semiconductor
Fairchild Semiconductor

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