DataSheet.es    


PDF AUIRGP4066D1 Data sheet ( Hoja de datos )

Número de pieza AUIRGP4066D1
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de AUIRGP4066D1 (archivo pdf) en la parte inferior de esta página.


Total 13 Páginas

No Preview Available ! AUIRGP4066D1 Hoja de datos, Descripción, Manual

AUTOMOTIVE GRADE
AUIRGP4066D1
AUIRGP4066D1-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
C
G
VCES = 600V
IC(Nominal) = 75A
tSC 5μs, TJ(max) = 175°C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature Coefficient
• Soft Recovery Co-Pak Diode
E
n-channel
C
VCE(on) typ. = 1.70V
C
• Tight parameter distribution
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
Ordering Information
Base part number
Package Type
AUIRGP4066D1
AUIRGP4066D1-E
TO-247AC
TO-247AD
E
C
G
E
GC
TO-247AC
AUIRGP4066D1
TO-247AD
AUIRGP4066D1-E
G
G ate
C
C o lle c to r
E
Em itter
Standard Pack
Form
Tube
Tube
Quantity
25
25
Complete Part Number
AUIRGP4066D1
AUIRGP4066D1-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratsinognly; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measudreunder board mountedand
still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
600
g140
90
V
INOMINAL
ICM
ILM
IF NOMINAL
IFM
Nominal Current
Pulse Collector Current VGE = 15V
cClamped Inductive Load Current VGE = 20V
dDiode Nominal Current
dDiode Maximum Forward Current
75
225
300 A
75g
300
VGE Continuous Gate-to-Emitter Voltage
±20 V
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
454
227
-55 to +175
W
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min. Typ.
––– –––
––– –––
––– 0.24
––– 40
Max. Un
0.33
0.53
–––
–––
its
°C/W
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
May 02, 2013http://www.Datasheet4U.com

1 page




AUIRGP4066D1 pdf
AUIRGP4066D1/AUIRGP4066D1-E
18000
16000
14000
12000
10000
8000
6000
4000
2000
EON
EOFF
0
0 25 50 75 100 125 150
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 100μH; VCE = 400V, RG = 10Ω; VGE = 15V
15000
13000
11000
9000
7000
EON
5000
3000
EOFF
1000
0
25 50 75 100
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15V
60
55 RG = 10Ω
50 RG = 22Ω
45 RG = 47Ω
40
35 RG = 100Ω
30
25
20
20 40 60 80 100 120 140
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
160
1000
tdOFF
100 tF
tR
tdON
10
0
50 100
IC (A)
150
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 100μH; VCE = 400V, RG = 10Ω; VGE = 15V
10000
1000
tdOFF
100
tF
tR
tdON
10
0
20 40 60 80 100 120
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15V
55
50
45
40
35
30
25
0
20 40 60 80
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
100
5 www.irf.com © 2013 International Rectifier
May 02, 2013

5 Page





AUIRGP4066D1 arduino
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
AUIRGP4066D1/AUIRGP4066D1-E
TO-247AD Part Marking Information
Part Number
IR Logo
AUP4066D1-E
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Lot Code
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
May 02, 2013

11 Page







PáginasTotal 13 Páginas
PDF Descargar[ Datasheet AUIRGP4066D1.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
AUIRGP4066D1INSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier
AUIRGP4066D1-EINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar