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Número de pieza | K2995 | |
Descripción | MOSFET ( Transistor ) - 2SK2995 | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K2995 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! 2SK2995
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2995
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 48 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 30 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 250 V)
l Enhancement−mode :
Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics S
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Not e 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Not e 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
ymbol
VDSS
VDGR
VGSS ±
ID
IDP
PD
EAS 925
IAR
EAR 9
Tch 150
Tstg
Rating
250
250
20
30
120
90
30
−55~150 °
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics S
ymbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c) 1.
Rth (ch−a) 41.
39
6
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.74 mH, IAR = 30 A, RG = 25 Ω
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02
http://www.Datasheet4U.com
1 page 2SK2995
RG = 25 Ω
VDD = 50 V, L = 1.74 mH
EAS
=
1
2
× L × I2
× çæ
è
BVDSS
BVDSS - VDD
÷ö
ø
5 2002-09-02
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet K2995.PDF ] |
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