|
|
|
부품번호 | HBNP1268Q8 기능 |
|
|
기능 | General Purpose NPN PNP Epitaxial Planar Transistors(quadruple transistors) | ||
제조업체 | CYStech Electronics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C198Q8
Issued Date : 2010.11.29
Revised Date :
Page No. : 1/8
General Purpose NPN / PNP Epitaxial Planar Transistors
(quadruple transistors)
HBNP1268Q8 BVCEO
NPN
50V
PNP
-30V
IC 4A -5A
RCE(SAT)(TYP) 125mΩ 180mΩ
Features
• Includes two NPN chips and two PNP chips in a SOP-8 package.
• Pb-free lead plating package
Equivalent Circuit
HBNP1268Q8
Outline
SOP-8
B:Base
E:Emitter
C:Collector
HBNP1268Q8
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Spec. No. : C198Q8
Issued Date : 2010.11.29
Revised Date :
Page No. : 4/8
Typical Characteristics
NPN 1 & NPN 2
Emitter Grounded Output Characteristics
0.25
IB=500uA
0.2
IB=400uA
0.15 IB=300uA
0.1 IB=200uA
0.05
0
01
IB=100uA
IB=0
234 56
Collector-to-Emitter Voltage---VCE(V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
IB=2.5mA
IB=2mA
IB=1.5mA
IB=1mA
IB=500uA
IB=0
1 234
56
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
3
IB=10mA
2.5 IB=8mA
2 IB=6mA
IB=4mA
1.5
IB=2mA
1
0.5
0
01
IB=0
23 45
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
VCE=5V
100 VCE=2V
VCE=1V
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
01
Emitter Grounded Output Characteristics
IB=25mA
IB=20mA
IB=15mA
IB=10mA
IB=5mA
IB=0
2 34
56
Collector-to-Emitter Voltage---VCE(V)
10000
Saturation Voltage vs Collector Current
1000
100
VCE(SAT)
IC=100IB
IC=50IB
10
1
10 100 1000
Collector Current---IC (mA)
10000
10
1
IC=20IB
10 100 1000
Collector Current---IC (mA)
10000
HBNP1268Q8
CYStek Product Specification
4페이지 CYStech Electronics Corp.
Spec. No. : C198Q8
Issued Date : 2010.11.29
Revised Date :
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HBNP1268Q8
CYStek Product Specification
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ HBNP1268Q8.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HBNP1268Q8 | General Purpose NPN PNP Epitaxial Planar Transistors(quadruple transistors) | CYStech Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |