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IS67WV51216DBLL 데이터시트 PDF




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부품번호 IS67WV51216DBLL 기능
기능 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM
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IS67WV51216DBLL 데이터시트, 핀배열, 회로
IS66WV51216DALL
IS66/67WV51216DBLL
8Mb LOW VOLTAGE,
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
JULY 2011
FEATURES
• High-speed access time:
– 70ns (IS66WV51216DALL, IS66/67WV51216DBLL)
– 55ns (IS66/67WV51216DBLL)
• CMOS low power operation
• Single power supply
– Vdd = 1.7V-1.95V (IS66WV51216 ALL)
– Vdd = 2.5V-3.6V (IS66/67WV51216 BLL)
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS66WV51216DALL and IS66/67WV51216DBLL
are high-speed, 8M bit static RAMs organized as 512K
words by 16 bits. It is fabricated using ISSI's high-
performance CMOS technology.This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is
(deselected) or when CS1 is , CS2 is
and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS66WV51216DALL and IS66/67WV51216DBLL are
packaged in the JEDEC standard 48-ball mini BGA (6mm
x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo
available for die sales.
A0-A18
DECODER
512K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE CONTROL
WE CIRCUIT
UB
LB
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/28/2011
1
http://www.Datasheet4U.com




IS67WV51216DBLL pdf, 반도체, 판매, 대치품
IS66WV51216DALL
IS66/67WV51216DBLL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
Vterm
Terminal Voltage with Respect to GND
–0.2 to Vdd+0.3
V
Temperature Under Bias
–40 to +85
°C
Vdd Vdd Related to GND
–0.2 to +3.8
V
tg Storage Temperature
–65 to +150
°C
Pt Power Dissipation
1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 2.5V-3.6V
Symbol Parameter
Test Conditions
Vdd
Vo
Output HIGH Voltage
Io = -1 mA
2.5-3.6V
Vo
Output LOW Voltage
Io = 2.1 mA
2.5-3.6V
V Input HIGH Voltage(1)
2.5-3.6V
V Input LOW Voltage(1)
2.5-3.6V
I Input Leakage
GND V n Vdd
I o Output Leakage
GND Vout Vdd, Outputs Disabled
Notes:
1. V (min.) = –2.0V AC (pulse width < 10ns). Not 100% tested.
V (max.) = Vdd + 2.0V AC (pulse width < 10ns). Not 100% tested.
Min.
2.2
2.2
–0.2
–1
–1
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 1.7V-1.95V
Symbol Parameter
Test Conditions
Vdd
Vo
Output HIGH Voltage
Io = -0.1 mA
1.7-1.95V
Vo
Output LOW Voltage
Io = 0.1 mA
1.7-1.95V
V Input HIGH Voltage(1)
1.7-1.95V
V Input LOW Voltage(1)
1.7-1.95V
I Input Leakage
GND V n Vdd
I o Output Leakage
GND Vout Vdd, Outputs Disabled
Notes:
1. V (min.) = –1.0V AC (pulse width < 10ns). Not 100% tested.
V (max.) = Vdd + 1.0V AC (pulse width < 10ns). Not 100% tested.
Min.
1.4
1.4
–0.2
–1
–1
Max.
0.4
Vdd + 0.3
0.6
1
1
Max.
0.2
Vdd + 0.2
0.4
1
1
Unit
V
V
V
V
A
A
Unit
V
V
V
V
A
A
4 Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/28/2011

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IS67WV51216DBLL 전자부품, 판매, 대치품
IS66WV51216DALL
IS66/67WV51216DBLL
2.5V-3.6V POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Icc Vdd Dynamic Operating Vdd = Max.,
Supply Current
Iout = 0 mA, f = fm
All Inputs 0.4V
Com.
Ind.
Auto.
or Vdd 0.3V
typ.(2)
Icc1 Operating Supply
Current
Vdd = Max., CS1 = 0.2V Com.
WE = Vdd – 0.2V
Ind.
CS2 = Vdd – 0.2V, f = 1m zAuto.
I 1 TTL Standby Current Vdd = Max.,
Com.
(TTL Inputs)
V n = V or V
Ind.
CS1 = V , CS2 = V , Auto.
f = 1 MHz
Max.
55ns
25
28
35
15
5
5
10
0.6
0.6
1
Unit
mA
mA
mA
OR
ULB Control
Vdd = Max., V n = V or V
CS1 = V , f = 0, UB = V , LB = V
I 2 CMOS Standby
Vdd = Max.,
Com.
Current (CMOS Inputs) CS1 Vdd – 0.2V,
Ind.
CS2 0.2V,
Auto.
V n Vdd – 0.2V, or
typ.(2)
V n 0.2V, f = 0
100 A
130
150
75
OR
ULB Control
Vdd = Max., CS1 = V , S2=V
V n Vdd – 0.2V, or V n 0.2V, f = 0;
UB / LB = Vdd – 0.2V
Note:
1. At f = fm , address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, T = 25oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/28/2011
7

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IS67WV51216DBLL

8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Integrated Silicon Solution
Integrated Silicon Solution

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