IXTH52P10P Datasheet PDF - IXYS Corporation
| Part Number | IXTH52P10P | |
| Description | P-Channel Enhancement Mode Avalanche Rated | |
| Manufacturers | IXYS Corporation | |
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PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
IXTA52P10P
IXTH52P10P
IXTP52P10P
IXTQ52P10P
TO-247 (IXTH)
VDSS =
ID25 =
≤RDS(on)
- 100V
- 52A
50mΩ
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
GS
D (TAB)
Test Conditions
G
DS
D (TAB)
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
-100
-100
±20
±30
V
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
- 52
-130
- 52
1.5
A
A
A
J
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
300
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300 °C
260 °C
Mounting torque (TO-3P,TO-220,TO-247) 1.13/10
Nm/lb.in.
TO-247
TO-3P
TO-220
TO-263
6.0 g
5.5 g
3.0 g
2.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
±100 nA
-10 μA
-150 μA
50 mΩ
G DS
TO-3P (IXTQ)
D (TAB)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features:
z International standard packages
z Fast intrinsic diode
z Dynamic dV/dt Rated
z Avalanche Rated
z Rugged PolarPTM process
z Low QG and Rds(on) characterization
z Low Drain-to-Tab capacitance
z Low package inductance
- easy to drive and to protect
Applications:
z Hight side switching
z Push-pull amplifiers
z DC Choppers
z Current regulators
z Automatic test equipment
Advantages:
z Low gate charge results in simple
drive requirement
z Improved Gate, Avalanche and
dynamic dV/dt ruggedness
z High power density
z Fast switching
z Easy to parallel
© 2008 IXYS CORPORATION, All rights reserved
DS99912A(5/08)
http://www.Datasheet4U.com
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IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Fig. 7. Input Admittance
-70
-60
TJ = - 40ºC
25ºC
-50 125ºC
-40
-30
-20
-10
0
-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
-160
-140
-120
-100
-80
-60
TJ = 125ºC
-40 TJ = 25ºC
-20
0
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0
VSD - Volts
32
28
24
20
16
12
8
4
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
125ºC
-10 -20 -30 -40 -50 -60 -70
ID - Amperes
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
Fig. 10. Gate Charge
VDS = - 50V
I D = - 26A
I G = -1mA
5 10 15 20 25 30 35 40 45 50 55 60
QG - NanoCoulombs
10,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
1,000
Coss
Crss
100
0
-5 -10 -15 -20 -25 -30 -35 -40
VDS - Volts
- 1,000
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit @ VGS = -15V
-100 10ms
1ms
100µs
25µs
-10 DC, 100ms
-1
- 10
TJ = 150ºC
TC = 25ºC
Single Pulse
VDS - Volts
- 100
© 2008 IXYS CORPORATION, All rights reserved
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| Information | Total 6 Pages | |
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