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부품번호 | IXTQ52P10P 기능 |
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기능 | P-Channel Enhancement Mode Avalanche Rated | ||
제조업체 | IXYS Corporation | ||
로고 | |||
전체 6 페이지수
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
IXTA52P10P
IXTH52P10P
IXTP52P10P
IXTQ52P10P
TO-247 (IXTH)
VDSS =
ID25 =
≤RDS(on)
- 100V
- 52A
50mΩ
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
GS
D (TAB)
Test Conditions
G
DS
D (TAB)
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
-100
-100
±20
±30
V
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
- 52
-130
- 52
1.5
A
A
A
J
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
300
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300 °C
260 °C
Mounting torque (TO-3P,TO-220,TO-247) 1.13/10
Nm/lb.in.
TO-247
TO-3P
TO-220
TO-263
6.0 g
5.5 g
3.0 g
2.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
±100 nA
-10 μA
-150 μA
50 mΩ
G DS
TO-3P (IXTQ)
D (TAB)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features:
z International standard packages
z Fast intrinsic diode
z Dynamic dV/dt Rated
z Avalanche Rated
z Rugged PolarPTM process
z Low QG and Rds(on) characterization
z Low Drain-to-Tab capacitance
z Low package inductance
- easy to drive and to protect
Applications:
z Hight side switching
z Push-pull amplifiers
z DC Choppers
z Current regulators
z Automatic test equipment
Advantages:
z Low gate charge results in simple
drive requirement
z Improved Gate, Avalanche and
dynamic dV/dt ruggedness
z High power density
z Fast switching
z Easy to parallel
© 2008 IXYS CORPORATION, All rights reserved
DS99912A(5/08)
http://www.Datasheet4U.com
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGS = -10V
- 9V
- 8V
- 7V
- 6V
- 5V
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
-55
VGS = -10V
-50 - 9V
-45
-40 - 8V
-35
-30
-25 - 7V
-20
- 6V
-15
-10
- 5V
-5
0
0.0
-0.5 -1.0 -1.5
-2.0 -2.5 -3.0 -3.5
VDS - Volts
-4.0 -4.5 -5.0 -5.5
Fig. 5. RDS(on) Normalized to ID = - 26A vs.
Drain Current
2.6
2.4 VGS = -10V
2.2
2.0
TJ = 125ºC
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
0
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Fig. 2. Extended Output Characteristics
@ 25ºC
-130
VGS = -10V
-110
- 9V
-90
- 8V
-70
-50 - 7V
-30 - 6V
- 5V
-10
0 -3 -6 -9 -12 -15 -18 -21 -24 -27 -30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 26A vs.
Junction Temperature
2.2
2.0 VGS = -10V
1.8
1.6 I D = - 52A
I D = - 26A
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TJ - Degrees Centigrade
150
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
IXTQ52P10P | P-Channel Enhancement Mode Avalanche Rated | IXYS Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |