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Si7856ADP 데이터시트 PDF




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부품번호 Si7856ADP 기능
기능 N-Channel 30-V (D-S) MOSFET
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Si7856ADP 데이터시트, 핀배열, 회로
N-Channel 30-V (D-S) MOSFET
Si7856ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)I
0.0037 at VGS = 10 V
30
0.0048 at VGS = 4.5 V
D (A)
25
23
Qg (Typ.)
39
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7856ADP-T1
Si7856ADP-T1-E3 (Lead (Pb)-free)
Si7856ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free available
• TrenchFET® Power MOSFET
Available
• Optimized for “Low Side” Synchronous
RoHS*
Rectifier Operation
COMPLIANT
• New Low Thermal Resistance PowerPAK® Package with
Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• DC/DC Converters
• Synchronous Rectifiers
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
25
20
15
12
Pulsed Drain Current (10 µs Pulse Width)
IDM 60
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
4.5 1.6
5.4 1.9
3.4 1.2
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter Sym
bol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t 10 s
Steady State
RthJA
18
50
23
65 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.5
Notes:
a. Surface Mounted on 1” x 1” FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 73157
S-80438-Rev. C, 03-Mar-08
www.vishay.com
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Si7856ADP pdf, 반도체, 판매, 대치품
Si7856ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6 200
0.4 ID = 250 µA
0.2
0.0
160
120
- 0.2
- 0.4
- 0.6
80
40
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
Time (s)
Single Pulse Power
100
Limited by RDS(on)*
10
1 ms
10 ms
2
1
Duty Cycle = 0.5
1
0.1 TC = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area Junction-to-Case
10
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
www.vishay.com
4
10- 3
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 50 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
Document Number: 73157
S-80438-Rev. C, 03-Mar-08

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Si7856ADP 전자부품, 판매, 대치품
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.024
(0.61)
0.026
(0.66)
0.260
(6.61)
0.150
(3.81)
0.050
(1.27)
0.032
(0.82)
Return to Index
Return to Index
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.040
(1.02)
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15

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Si7856ADP

N-Channel 30-V (D-S) MOSFET

Vishay Siliconix
Vishay Siliconix

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