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K2719 데이터시트 PDF




Toshiba Semiconductor에서 제조한 전자 부품 K2719은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 K2719 자료 제공

부품번호 K2719 기능
기능 MOSFET ( Transistor ) - 2SK2719
제조업체 Toshiba Semiconductor
로고 Toshiba Semiconductor 로고


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K2719 데이터시트, 핀배열, 회로
2SK2719
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK2719
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 3.7 (typ.)
High forward transfer admittance: |Yfs| = 2.6 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S
ymbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage
Drain current
DC
(Note 1)
Pulse
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
VDSS
DGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
3
9
125
295
3
12.5
150
55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. Gate
2. Drain (heat sink)
3. Source
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics S
ymbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
1.0
Rth (ch-a) 50.0
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 μH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
http://www.Datasheet4U.com




K2719 pdf, 반도체, 판매, 대치품
RDS (ON) – Tc
20
Common source
VGS = 10 V
Pulse test
16
12
8 ID = 3 A
1.5 0.8
4
0
80 160 40
0
40 80 120
Case temperature Tc (°C)
2000
1000
500
300
Capacitance – VDS
Ciss
100
50
30 Common source
VGS = 0 V
10
f = 1 MHz
Tc = 25°C
5 Pulse test
0.1 0.3
1
3
Coss
Crss
10 30 100
Drain-source voltage VDS (V)
2SK2719
IDR – VDS
10
Common source
5 Tc = 25°C
3 Pulse test
1
0.5
0.3
0.1
0.05
0.03
0.01
0
10
3
5
0.2 0.4
1
VGS = 0, 1 V
0.6
0.8
1.0
Drain-source voltage VDS (V)
1.2
Vth – Tc
5
Common source
VDS = 10 V
4 ID = 1 mA
Pulse test
3
2
1
0
80 40 0 40 80 120 160
Case temperature Tc (°C)
PD – Tc
150
100
50
0
0 40 80 120 160
Case temperature T c (°C)
Dynamic Input/Output Characteristics
500 Common source 20
Tc = 25°C
ID = 3 A
400
Pulse test
16
VDS
VDD = 100 V
300 12
200
400
200 8
100 VGS
4
00
0 8 16 24 32 40
Total gate charge Qg (nC)
4 2009-09-29

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일반 IC 문의 : 샘플 및 소량 구매
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상호 : 아이지 인터내셔날

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