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부품번호 | K2719 기능 |
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기능 | MOSFET ( Transistor ) - 2SK2719 | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 6 페이지수
2SK2719
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK2719
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.6 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S
ymbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage
Drain current
DC
(Note 1)
Pulse
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
VDSS
DGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
3
9
125
295
3
12.5
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. Gate
2. Drain (heat sink)
3. Source
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics S
ymbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
1.0
Rth (ch-a) 50.0
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 μH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
http://www.Datasheet4U.com
RDS (ON) – Tc
20
Common source
VGS = 10 V
Pulse test
16
12
8 ID = 3 A
1.5 0.8
4
0
−80 160 −40
0
40 80 120
Case temperature Tc (°C)
2000
1000
500
300
Capacitance – VDS
Ciss
100
50
30 Common source
VGS = 0 V
10
f = 1 MHz
Tc = 25°C
5 Pulse test
0.1 0.3
1
3
Coss
Crss
10 30 100
Drain-source voltage VDS (V)
2SK2719
IDR – VDS
10
Common source
5 Tc = 25°C
3 Pulse test
1
0.5
0.3
0.1
0.05
0.03
0.01
0
10
3
5
−0.2 −0.4
1
VGS = 0, −1 V
−0.6
−0.8
−1.0
Drain-source voltage VDS (V)
−1.2
Vth – Tc
5
Common source
VDS = 10 V
4 ID = 1 mA
Pulse test
3
2
1
0
−80 −40 0 40 80 120 160
Case temperature Tc (°C)
PD – Tc
150
100
50
0
0 40 80 120 160
Case temperature T c (°C)
Dynamic Input/Output Characteristics
500 Common source 20
Tc = 25°C
ID = 3 A
400
Pulse test
16
VDS
VDD = 100 V
300 12
200
400
200 8
100 VGS
4
00
0 8 16 24 32 40
Total gate charge Qg (nC)
4 2009-09-29
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |