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PDF FIR2N60FG Data sheet ( Hoja de datos )
| Número de pieza | FIR2N60FG | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | First Semiconductor | |
| Logotipo |  |
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Advanced N-Ch Power MOSFET
Switchng Regulator Application
Features
• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=3.4F(Typ.)
• Low gate charge : Qg= 7.0nC(Typ.)
• Low RDS(on) :RDS(on)=7.0Ω(Max.)
FIR2N60FG
PIN Connection TO-220F
G
DS
D
G
S
Marking Diagram
YAWW
FIR2N60F
Y = Year
A = Assembly Location
WW = Work Week
FIR2N60F = Specific Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted) Advanced N-Ch Power MOSFET
Characteristic Symbol
Rating
Unit
Drain-source voltage
VDSS 600
V
Gate-source voltage
Drain current (DC) *
VGSS
(Tc=25℃)
ID (Tc=100℃)
±20
1.5
1
V
A
A
Drain current (Pulsed) *
IDM 6.0
A
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
②
①
①
PD19.1
IAS 2.0
EAS 88
IAR 2.0
EAR 8
W
A
mJ
A
mJ
Junction temperature
Storage temperature range
TJ
150
°C
Tstg -55~150
* Limited by maximum junction temperature
Characteristic Symbol
Thermal
resistance
Junction-case R
Junction-ambient R
th(J-C) -
th(J-A) -
Typ.
Max.
5.6
100
Unit
°C/W
@ 2010 Copyright By American First Semiconductor
http://www.Datasheet4U.com
Page 1/7
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
FIR2N60FG
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
www.First-semi.com
Page 5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FIR2N60FG.PDF ] | |
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