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4H11G PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 4H11G
기능 Complementary Power Transistors
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4H11G 데이터시트, 핀배열, 회로
4H11G(NPN)
5H11G(PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Pb−Free Packages are Available
Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation* @ TA = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
VCEO
VEB
IC
PD
PD
TJ, Tstg
Max
80
5
8
16
20
0.16
1.75
0.014
−55 to
+ 150
Unit
Vdc
Vdc
Adc
W
W/°C
W
W/°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
71.4 °C/W
Lead Temperature for Soldering
TL 260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
MARKING
DIAGRAMS
12
3
4
DPAK
CASE 369C
STYLE 1
YWW
J4
xH11
1
2
3
4
DPAK−3
CASE 369D
STYLE 1
Y = Year
WW = Work Week
x = 4 or 5
YWW
J4
xH11
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4H11G pdf, 반도체, 판매, 대치품
4H11 (NPN) 5H11 (PNP)
1000 1000
100
TJ = 25°C
VCE = 4 V
VCE = 1 V
100
TJ = 25°C
VCE = 4 V
1V
10
0.1
11
IC, COLLECTOR CURRENT (AMPS)
Figure 4. 4H11 DC Current Gain
10
0 0.1
11
IC, COLLECTOR CURRENT (AMPS)
Figure 5. 5H11 DC Current Gain
0
1000
TJ = 125°C
25°C
100
−40 °C
10
0.1
VCE = 1 V
11
IC, COLLECTOR CURRENT (AMPS)
Figure 6. 4H11 Current Gain
versus Temperature
1.2
1
0.8
0.6
0.4
0.2
0
0.1
VBE(sat)
IC/IB = 10
TJ = 25°C
VCE(sat)
11
IC, COLLECTOR CURRENT (AMPS)
Figure 8. 4H11 On−Voltages
1000
TJ = 125°C
25°C
−40 °C
100
VCE = 1 V
10
0 0.1
11
IC, COLLECTOR CURRENT (AMPS)
Figure 7. 5H11 Current Gain
versus Temperature
1.2
1
0.8
0.6
0.4
0.2
0
0 0.1
VBE(sat)
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. 5H11 On−Voltages
5
0
10

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4H11G

Complementary Power Transistors

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