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PDF 4H11G Data sheet ( Hoja de datos )
| Número de pieza | 4H11G | |
| Descripción | Complementary Power Transistors | |
| Fabricantes | ETC | |
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4H11G(NPN)
5H11G(PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Pb−Free Packages are Available
• Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation* @ TA = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
VCEO
VEB
IC
PD
PD
TJ, Tstg
Max
80
5
8
16
20
0.16
1.75
0.014
−55 to
+ 150
Unit
Vdc
Vdc
Adc
W
W/°C
W
W/°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
71.4 °C/W
Lead Temperature for Soldering
TL 260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
MARKING
DIAGRAMS
12
3
4
DPAK
CASE 369C
STYLE 1
YWW
J4
xH11
1
2
3
4
DPAK−3
CASE 369D
STYLE 1
Y = Year
WW = Work Week
x = 4 or 5
YWW
J4
xH11
http://www.Datasheet4U.com
1 page  
4H11 (NPN) 5H11 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
B
VR
−T−
SEATING
PLANE
C
E
S
F
4
1 23
A
K
J
LH
D 2 PL
G 0.13 (0.005) M T
U
Z
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.235 0.245
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.018 0.023
F 0.037 0.045
G 0.180 BSC
H 0.034 0.040
J 0.018 0.023
K 0.102 0.114
L 0.090 BSC
R 0.180 0.215
S 0.025 0.040
U 0.020 −−−
V 0.035 0.050
Z 0.155 −−−
MILLIMETERS
MIN MAX
5.97 6.22
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
4.58 BSC
0.87 1.01
0.46 0.58
2.60 2.89
2.29 BSC
4.57 5.45
0.63 1.01
0.51 −−−
0.89 1.27
3.93 −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
3.0
0.118
5.80
0.228
1.6 6.172
0.063 0.243
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 4H11G.PDF ] | |
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