|
|
|
부품번호 | 5H11G 기능 |
|
|
기능 | Complementary Power Transistors | ||
제조업체 | ETC | ||
로고 | |||
전체 6 페이지수
4H11G(NPN)
5H11G(PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Pb−Free Packages are Available
• Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation* @ TA = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
VCEO
VEB
IC
PD
PD
TJ, Tstg
Max
80
5
8
16
20
0.16
1.75
0.014
−55 to
+ 150
Unit
Vdc
Vdc
Adc
W
W/°C
W
W/°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
71.4 °C/W
Lead Temperature for Soldering
TL 260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
MARKING
DIAGRAMS
12
3
4
DPAK
CASE 369C
STYLE 1
YWW
J4
xH11
1
2
3
4
DPAK−3
CASE 369D
STYLE 1
Y = Year
WW = Work Week
x = 4 or 5
YWW
J4
xH11
http://www.Datasheet4U.com
4H11 (NPN) 5H11 (PNP)
1000 1000
100
TJ = 25°C
VCE = 4 V
VCE = 1 V
100
TJ = 25°C
VCE = 4 V
1V
10
0.1
11
IC, COLLECTOR CURRENT (AMPS)
Figure 4. 4H11 DC Current Gain
10
0 0.1
11
IC, COLLECTOR CURRENT (AMPS)
Figure 5. 5H11 DC Current Gain
0
1000
TJ = 125°C
25°C
100
−40 °C
10
0.1
VCE = 1 V
11
IC, COLLECTOR CURRENT (AMPS)
Figure 6. 4H11 Current Gain
versus Temperature
1.2
1
0.8
0.6
0.4
0.2
0
0.1
VBE(sat)
IC/IB = 10
TJ = 25°C
VCE(sat)
11
IC, COLLECTOR CURRENT (AMPS)
Figure 8. 4H11 On−Voltages
1000
TJ = 125°C
25°C
−40 °C
100
VCE = 1 V
10
0 0.1
11
IC, COLLECTOR CURRENT (AMPS)
Figure 7. 5H11 Current Gain
versus Temperature
1.2
1
0.8
0.6
0.4
0.2
0
0 0.1
VBE(sat)
IC/IB = 10
TJ = 25°C
VCE(sat)
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. 5H11 On−Voltages
5
0
10
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ 5H11G.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
5H11G | Complementary Power Transistors | ETC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |