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STPSC2006CW 데이터시트 PDF




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부품번호 STPSC2006CW 기능
기능 600V power Schottky silicon carbide diode
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STPSC2006CW 데이터시트, 핀배열, 회로
STPSC2006CW
600 V power Schottky silicon carbide diode
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
A1
K
A2
A2
K
A1
TO-247
STPSC2006CW
Table 1. Device summary
Symbol
IF(AV)
VRRM
Tj (max)
QC (typ)
Value
2 x 10 A
600 V
175 °C
12 nC
March 2011
Doc ID 018506 Rev 1
1/7
www.st.com
7
http://www.Datasheet4U.com




STPSC2006CW pdf, 반도체, 판매, 대치품
Characteristics
Figure 7.
Total capacitive charge versus dIF/dt (typical values, per diode)
18 QC(nC)
IF = 10 A
16 VR = 400 V
14 Tj = 150 °C
12
10
8
6
4
2
0 dIF/dt(A/µs)
0 50 100 150 200 250 300 350 400 450 500
STPSC2006CW
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STPSC2006CW 전자부품, 판매, 대치품
STPSC2006CW
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부품번호상세설명 및 기능제조사
STPSC2006CW

600V power Schottky silicon carbide diode

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