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IRL530 데이터시트 PDF




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부품번호 IRL530 기능
기능 Power MOSFET ( Transistor )
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IRL530 데이터시트, 핀배열, 회로
Power MOSFET
IRL530, SiHL530
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5.0 V
28
3.8
14
Single
0.16
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R DS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
•F ast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combi nation of fast swi tching,
ruggedized device design, low on -resistance a nd cost
effectiveness.
The TO-220AB package is univers ally preferred for all
commercial-industrial app lications at powe r dissipation
levels to approximately 50 W. The low thermal resistance
and low package c ost of th e TO- 220AB con tribute to its
wide acceptance throughout the industry.
TO-220AB
IRL530PbF
SiHL530-E3
IRL530
SiHL530
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER S
YMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
VDS 100
VGS ±
ID
IDM 60
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt 5.5
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 1.9 mH, Rg = 25 Ω IAS = 15 A (see fig. 12).
c. ISD 15 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
LIMIT
10
15
11
0.59
290
15
8.8
88
- 55 to + 175
300d
10 lbf
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
· in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91299
S11-0518-Rev. B, 21-Mar-11
www
.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com




IRL530 pdf, 반도체, 판매, 대치품
IRL530, SiHL530
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91299
S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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IRL530 전자부품, 판매, 대치품
IRL530, SiHL530
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-+
Rg
dV/dt controlled by Rg
+
Driver same type as D.U.T.
ISD controlled by duty factor “D”
- VDD
D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
VDD
ISD
Vishay S iliconix maintains worldw ide manufacturin g capabili ty. Products ma y be m anufactured at on e of several qua lified locatio ns. R eliability data for Silicon
Technology and P ackage Reli ability rep resent a composit e of all qualifi ed locat ions. For r elated do cuments su ch as package/tape drawings, pa rt ma rking, and
reliability data, see www.vishay.com/ppg?91299.
Document Number: 91299
S11-0518-Rev. B, 21-Mar-11
www
.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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