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Datasheet MBT3906DW1 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MBT3906DW1Dual General Purpose Transistor

MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is designed for general purpose amplifier applications and is housed in the SOT −363 six−leaded surface mount package. By putting two discre
ON Semiconductor
ON Semiconductor		transistor
2MBT3906DW1T1Dual General Purpose Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six�
Motorola Semiconductors
Motorola Semiconductors		transistor
3MBT3906DW1T1Dual General Purpose Transistors

Leshan Radio Company
Leshan Radio Company		transistor
4MBT3906DW1T1Dual General Purpose Transistor

MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices i
ON Semiconductor
ON Semiconductor		transistor
5MBT3906DW1T1GDual General Purpose Transistor

MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices
ON Semiconductor
ON Semiconductor		transistor


MBT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1MBT2222SILICON PLANAR EPITAXIAL TRANSISTORS

MBT2222 MBT2222A MBT222/MBT222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS 13 ABSOLUTE MAXIMUM RATINGS Descriptions Storage Temperature Junction Temperature Maximum Power Dissipation (Ta=25 C) Maximum Collector to Base Voltage Maximum Collector to Emitter Voltage Maximum Emitter to
DAIWA
DAIWA		transistor
2MBT2222ASILICON PLANAR EPITAXIAL TRANSISTORS

MBT2222 MBT2222A MBT222/MBT222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS 13 ABSOLUTE MAXIMUM RATINGS Descriptions Storage Temperature Junction Temperature Maximum Power Dissipation (Ta=25 C) Maximum Collector to Base Voltage Maximum Collector to Emitter Voltage Maximum Emitter to
DAIWA
DAIWA		transistor
3MBT35200High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications

MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications A Device of the mX™ Family http://onsemi.com 35 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vo
ON Semiconductor
ON Semiconductor		transistor
4MBT35200MT1High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications

MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications A Device of the mX™ Family http://onsemi.com 35 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vo
ON Semiconductor
ON Semiconductor		transistor
5MBT3904DW1T1Dual General Purpose Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six�
Motorola Semiconductors
Motorola Semiconductors		transistor
6MBT3904DW1T1Dual General Purpose Transistors

Leshan Radio Company
Leshan Radio Company		transistor
7MBT3904DW1T1Dual General Purpose Transistors

MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package.
ON Semiconductor
ON Semiconductor		transistor



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Número de pieza Descripción Fabricantes PDF
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Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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