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92T03GH PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 92T03GH
기능 AP92T03GH
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92T03GH 데이터시트, 핀배열, 회로
Advanced Power
Electronics Corp.
AP92T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
D
Fast Switching Characteristics
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP92T03GJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
75
50
300
89
0.71
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
1.4
62.5
110
Units
V
V
A
A
A
W
W/
Units
/W
/W
/W
Data and specifications subject to change without notice
1
200901123
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92T03GH pdf, 반도체, 판매, 대치품
AP92T03GH/J
12
I D =40A
9
V DS =12V
V DS =16V
V DS =20V
6
3
0
0 20 40 60 80 100 120
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100us
100
1ms
10
T C =25 o C
Single Pulse
10ms
100ms
1s
DC
1
0.1 1
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
280
V DS =5V
240
200
T j =25 o C
T j =150 o C
160
120
80
40
0
01
2 3 4 56
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
C iss
C1000
oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4

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92T03GH

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