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부품번호 | 2V7002L 기능 |
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기능 | Small Signal MOSFET | ||
제조업체 | ON Semiconductor | ||
로고 | ![]() |
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전체 4 페이지
![]() 2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
• 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable (2V7002L)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Drain Current
− Continuous TC = 25°C (Note 1)
− Continuous TC = 100°C (Note 1)
− Pulsed (Note 2)
VDSS
VDGR
ID
ID
IDM
60
60
± 115
± 75
± 800
Vdc
Vdc
mAdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
VGS ± 20 Vdc
VGSM ± 40 Vpk
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
225 mW
1.8 mW/°C
556 °C/W
Total Device Dissipation
(Note 4) Alumina Substrate, TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
300 mW
2.4 mW/°C
417 °C/W
Junction and Storage Temperature
TJ, Tstg
− 55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
7.5 W @ 10 V,
500 mA
N−Channel
3
ID MAX
115 mA
1
2
3
MARKING
DIAGRAM
1
2
SOT−23
CASE 318
STYLE 21
702 MG
G
1
702 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
2N7002LT1G
2N7002LT3G
SOT−23 3000 Tape & Reel
(Pb−Free) 10,000 Tape & Reel
2V7002LT1G
2V7002LT3G
2N7002LT1H*
SOT−23
(Pb−Free)
3000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Not for new design.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 7
1
Publication Order Number:
2N7002L/D
http://www.Datasheet4U.com
![]() ![]() 2N7002L, 2V7002L
PACKAGE DIMENSIONS
E
A
A1
D
3
12
e
HE
b
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
SEE VIEW C
c
0.25
q
L
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN
NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e 1.78 1.90 2.04
L 0.10
0.20
0.30
L1 0.35
0.54
0.69
H E 2.10
q 0°
2.40
−−−
2.64
10°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
0.9
0.035
0.8
0.031
2.0
0.079
ǒ ǓSCALE 10:1
mm
inches
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2N7002L/D
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ON Semiconductor에서 제조한 전자 부품 2V7002L은 전자 산업 및 응용 분야에서 광범위하게 사용되는 반도체 소자입니다. 2V7002L의 기능 및 특징 중 하나는 "Small Signal MOSFET" 입니다. 일반적으로, ON Semiconductor에서 제조되는 전자부품들은 우수한 성능과 품질에 대한 신뢰성을 갖추고 있습니다. |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
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