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PDF SUB70N03-09BP Data sheet ( Hoja de datos )
| Número de pieza | SUB70N03-09BP | |
| Descripción | N-Channel MOSFET PWM Optimized | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
SUP/SUB70N03-09BP
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
0.009 @ VGS = 10 V
30
0.013 @ VGS = 4.5 V
TO-220AB
ID (A)
70a
60
TO-263
D
DRAIN connected to TAB
GD S
Top View
SUP70N03-09BP
G DS
Top View
SUB70N03-09BP
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
30
"20
70b
50
200
30
61
93b
–55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)c
Free Air (TO-220AB)
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71229
S-20102—Rev. B, 11-Mar-02
Symbol
RthJA
RthJC
Limit
40
62.5
1.6
Unit
V
A
mJ
W
_C
Unit
_C/W
www.vishay.com
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1 page  
New Product
SUP/SUB70N03-09BP
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
80
60
1000
100
Safe Operating Area
Limited
by rDS(on)
10 ms
100 ms
1 ms
40 10
10 ms
100 ms
dc
20 1
TC = 25_C
Single Pulse
0
0
2
25 50 75 100 125 150 175
TC – Case Temperature (_C)
0.1
0.1
1 10
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1 Duty Cycle = 0.5
100
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 71229
S-20102—Rev. B, 11-Mar-02
www.vishay.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SUB70N03-09BP.PDF ] | |
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