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9435GH PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 9435GH
기능 AP9435GH
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9435GH 데이터시트, 핀배열, 회로
Advanced Power
Electronics Corp.
AP9435GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
D
Simple Drive Requirement
Fast Switching
G
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-252/TO-251 package is wid ely used for commercial-industrial
application.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
-30V
50mΩ
- 20A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Rating
- 30
±20
- 20
-13
-60
12.5
0.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
10
110
Units
/W
/W
Data and specifications subject to change without notice
201017075-1/4
http://www.Datasheet4U.com




9435GH pdf, 반도체, 판매, 대치품
AP9435GH/J
12
I D =-10A
V DS =-24V
10
8
6
4
2
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1
T C =25 o C
Single Pulse
1ms
10ms
100ms
DC
0.1
0.1 1 10
-V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off)tf
f=1.0MHz
1000
Ciss
100
Coss
Crss
10
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
-4.5V
QG
QGS QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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