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부품번호 | AP9435J-HF-3 기능 |
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기능 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP4435GH/J-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Fast Switching Characteristics
Low On-Resistance
RoHS-compliant, halogen-free
G
D
S
BV DSS
RDS(ON)
ID
-30V
20mΩ
-20A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
GDS
TO-252 (H)
The AP4435GH-HF-3 is in the TO-252 package which is widely preferredfor
commercial and industrial surface mount applications such as medium-power
DC/DC converters. The through-hole TO-251 version (AP4435GJ-HF-3) is
available where a small PCB footprint is required.
G
D
S
Absolute Maximum Ratings
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±20
-40
-25
-150
44.6
0.36
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient(PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Value
2.8
62.5
110
Ordering Information
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
AP4435GH-HF-3TR RoHS-compliant halogen-free TO-252 shipped on tape and reel 3(000 pcs/reel)
AP4435GJ-HF-3TB RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200907154-3 1/6
http://www.Datasheet4U.com
Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
10
I D = -26 A
V DS = -25 V
8
2000
1600
AP4435GH/J-HF-3
f=1.0MHz
6 1200
C iss
4 800
2
0
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
100us
10
T c =25 o C
Single Pulse
1
0.1
1
1ms
10ms
100ms
DC
10 100
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
400
C oss
C rss
0
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/6
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부품번호 | 상세설명 및 기능 | 제조사 |
AP9435J-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |