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PDF SSTJ212 Data sheet ( Hoja de datos )
| Número de pieza | SSTJ212 | |
| Descripción | LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER | |
| Fabricantes | Linear Integrated Systems | |
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J210, J211, J212
SSTJ210, SSTJ211, SSTJ212
LOW NOISE N-CHANNEL JFET
GENERAL PURPOSE AMPLIFIER
FEATURES
HIGH GAIN gfs=7000µmho MINIMUM (J211, J212)
HIGH INPUT IMPEDENCE IGSS= 100pA MAXIMUM
LOW CAPACITANCE CISS= 5pF TYPICAL
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Gate-Drain or Gate-Source Voltage
-25V
Gate Current
Total Device Dissipation @25°C Ambient
(Derate 3.27 mW/°C)
10mA
360mW
Operating Temperature Range
-55 to +150 °C
TTOO--9922
D
G
S
TO-92
TOP VIEW
J210, J211, J212
Plastic
DSG
SOT-23
TOP VIEW
SSTJ210, SSTJ211, SSTJ212
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTICS
SSTJ210
SSTJ211
SSTJ212 UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
IGSS Gate Reverse Current
-- -- -100 -- -- -100 -- -- -100 pA
VGS(off) Gate-Source Cutoff Voltage
-1 -- -3 -2.5 -- -4.5 -4 -- -6
BVGSS Gate-Source Breakdown Voltage -25 -- -- -25 -- -- -25 -- --
V
IDSS Drain Saturation Current
2 -- 15 7 -- 20 15 -- 40 mA
IG Gate Current
-- -10 -- -- -10 -- -- -10 -- pA
gfs
Common-Source Forward
Transconductance
gos
Common-Source Output
Conductance
CISS
Common-Source Input
Capacitance
Crss
Common-Source Reverse
Transfer Capacitance
4,000 -- 12,000 6,000 -- 12,000 7,000 -- 12,000
µmho
-- -- 150 -- -- 200 -- -- 200
-- 4 -- -- 4
- 1 -- -- 1
-- -- 4 --
-- -- 1 --
pF
en
Equivalent Short-Circuit Input
Noise Voltage
- 10 -- -- 10 -- -- 10 -- nV√Hz
CONDITIONS
VDS = 0, VGS = -15V (NOTE 1)
VDS = 15V, ID = 1nA
VDS = 0, IG = -1µA
VDS = 15V, VGS=0 (NOTE 2)
VDS = 10V, ID=1mA (NOTE 1)
f=1kHz
VDS = 15V, VGS=0 f=1MHz
f=1kHz
NOTE
1. Approximately doubles for every 10°C increase in TA.
2. Pulse test duration = 2ms.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201113 5/20/2014 Rev A7 ECN# JS210_211_212
1 page | ||
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| PDF Descargar | [ Datasheet SSTJ212.PDF ] | |
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