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D60NF06 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 D60NF06
기능 STD60NF06
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D60NF06 데이터시트, 핀배열, 회로
STD60NF06
N-channel 60V - 0.014- 60A - DPAK
STripFET™ II Power MOSFET
General features
Type
STD60NF06
VDSS
60V
RDS(on)
<0.016
Exceptional dv/dt capability
Application oriented characterization
100% avalanche tested
ID
60A
Description
This Power Mosfet series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
Switching application
3
1
DPAK
Internal schematic diagram
Order codes
Part number
STD60NF06T4
Marking
D60NF06
Package
DPAK
Packaging
Tape & reel
July 2006
Rev 2
1/13
www.st.com
13




D60NF06 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STD60NF06
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
60
V
VDS = Max rating
VDS = Max rating,
TC = 175°C
1 µA
10 µA
VGS = ± 20V
±100 nA
VDS = VGS, ID = 250µA
2
4V
VGS = 10V, ID = 30A
0.014 0.016
Table 5.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 30A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 30A
RG = 4.7VGS = 10V
(see Figure 12)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 48V, ID = 60A,
VGS = 10V
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
20 S
1810
360
125
16
108
43
20
49
18
14
66
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
4/13

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D60NF06 전자부품, 판매, 대치품
STD60NF06
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
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D60NF06

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