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PDF AUIRL7736M2TR1 Data sheet ( Hoja de datos )
| Número de pieza | AUIRL7736M2TR1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
• Logic Level
• Advanced Process Technology
• Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
D
PD - 97656
AUIRL7736M2TR
AUIRL7736M2TR1
DirectFET® Power MOSFET
V(BR)DSS
40V
RDS(on) typ.
2.2mΩ
max.
3.0mΩ
ID (Silicon Limited)
112A
Qg 52nC
SS
G SS D
Applicable DirectFET Outline and Substrate Outline
M4 DirectFET® ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRL7736M2 to offer substantial system level savings and performance
improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The
AUIRL7736M2 can be utilized together with the AUIRL7732S2 as a sync/control MOSFET pair in a buck converter topology. This MOSFET
utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are
175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly
efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
ID @ TA = 25°C
IDM
PD @TC = 25°C
PEDAS@TA = 25°C
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
iPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃgAvalanche Current
gRepetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TTShTGermal
Storage
Resistance
Temperature
Range
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
fLinear Derating Factor
Max.
40
± 16
112
79
179
22
450
63
2.5
68
119
See Fig. 18a,18b,16,17
260
-55 to + 175
Typ.
–––
12.5
20
–––
1.0
Max.
60
–––
–––
2.4
–––
0.42
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
04/07/11
1 page  
AUIRL7736M2TR/TR1
3.0 1000
2.5
TJ = -40°C
100 TJ = 25°C
2.0 TJ = 175°C
1.5
ID = 150μA
ID = 250μA
ID = 1.0mA
1.0 ID = 1.0A
10
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
VGS = 0V
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
250
200 TJ = 25°C
150
TJ = 175°C
100
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
50
0
0
VDS = 5.0V
380μs PULSE WIDTH
20 40 60 80 100
ID,Drain-to-Source Current (A)
120
Fig 9. Typical Forward Transconductance Vs. Drain Current
14.0
12.0
ID= 67A
10.0
VDS= 32V
VDS= 20V
8.0 VDS= 8.0V
6.0
4.0
2.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
120
100
80
60
40
20
0.0
0
20 40 60 80 100 120 140
QG, Total Gate Charge (nC)
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
Fig 12. Maximum Drain Current vs. Case Temperature
5
5 Page 
AUIRL7736M2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers desig-
nated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale
supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alter-
ation and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this
information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such
altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold
International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims,
costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was
negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense,
are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible
for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the spe-
cific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number
including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in
automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet AUIRL7736M2TR1.PDF ] | |
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