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부품번호 | FODM8801B 기능 |
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기능 | High-Temperature Phototransistor Optocoupler | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 14 페이지수
April 2013
FODM8801A, FODM8801B, FODM8801C
OptoHiT™ Series, High-Temperature Phototransistor
Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Features
■ Utilizing Proprietary Process Technology to Achieve
High Operating Temperature: up to 125°C
■ Guaranteed Current Transfer Ratio (CTR)
Specifications Across Full Temperature Range
– Excellent CTR Linearity at High-Temperature
– CTR at Very Low Input Current, IF
■ High Isolation Voltage Regulated by Safety Agency:
C-UL / UL1577, 3750 VACRMS for 1 minute and
DIN EN/IEC60747-5-5
■ Compact Half-Pitch, Mini-Flat, 4-Pin Package
(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff
Height)
■ > 5mm Creepage and Clearance Distance
■ Applicable to Infrared Ray Reflow, 245°C
Applications
■ Primarily Suited for DC-DC Converters
■ Ground-Loop Isolation, Signal-Noise Isolation
■ Communications – Adapters, Chargers
■ Consumer – Appliances, Set-Top Boxes
■ Industrial – Power Supplies, Motor Control,
Programmable Logic Control
Description
In the OptoHiT™ series, the FODM8801 is a first-of-kind
phototransistor, utilizing Fairchild’s leading-edge
proprietary process technology to achieve high operating
temperature characteristics, up to 125°C. The opto-
coupler consists of an aluminum gallium arsenide
(AlGaAs) infrared light-emitting diode (LED) optically
coupled to a phototransistor, available in a compact half-
pitch, mini-flat, 4-pin package. It delivers high current
transfer ratio at very low input current. The input-output
isolation voltage, VISO, is rated at 3750 VACRMS.
Schematic
Package
ANODE 1
4 COLLECTOR
CATHODE 2
3 EMITTER
Figure 1. Schematic
Figure 2. Half-Pitch Mini-Flat
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com
Electrical Characteristics
Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified).
All typical values are measured at TA = 25°C.
Symbol
Parameter
Conditions
Min. Typ.
EMITTER
VF
ΔVF / ΔTA
IR
CT
Forward Voltage
Forward-Voltage Coefficient
Reverse Current
Terminal Capacitance
DETECTOR
BVCEO
BVECO
ICEO
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector Dark Current
CCE Capacitance
IF = 1 mA
IF = 1 mA
VR = 6 V
V = 0 V, f = 1 MHz
IC = 0.5 mA, IF = 0 mA
IE = 100 µA, IF = 0 mA
VCE = 75 V, IF = 0 mA,
TA = 25°C
VCE = 50 V, IF = 0 mA
VCE = 5 V, IF = 0 mA
VCE = 0 V, f = 1 MHz
1.00 1.35
-1.6
30
75 130
7 12
8
Max. Units
1.80 V
mV / °C
10 µA
pF
V
V
100 nA
50 µA
30 µA
pF
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
4
www.fairchildsemi.com
4페이지 Typical Performance Curves
100
10
TA = 125°C
= 25°C
TA = -40°C
1.0
0.1
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
VF – FORWARD VOLTAGE (V)
Figure 3. Forward Current vs. Forward Voltage
1000
VCE = 5V
TA = 25°C
100
100
TA = 25°C
VCE = 5.0V
10
VCE = 0.4V
1.0
0.1
0.1
1
10 100
IF – FORWARD CURRENT (mA)
Figure 4. Collector Current vs. Forward Current
10
VCE = 5V
TA = 25°C
NORMALIZED TO IF = 1mA
1.0
10
0.1
1
10 100
IF – FORWARD CURRENT (mA)
Figure 5. Current Transfer Ratio vs. Forward Current
1.2
VCE = 2V
1.0
IF = 2mA
0.8 IF = 0.5mA
IF = 1mA
0.6
0.4
0.2
0
-40 -20 0 20 40 60 80 100 120 140
TA – AMBIENT TEMPERATURE (°C)
Figure 7. Normalized CTR vs. Ambient Temperature
0.1
0.1
1
10 100
IF – FORWARD CURRENT (mA)
Figure 6. Normalized CTR vs. Forward Current
1.2
VCE = 5V
1.0
IF = 2mA
0.8 IF = 0.5mA
IF = 1mA
0.6
0.4
0.2
0
-40 -20 0 20 40 60 80 100 120 140
TA – AMBIENT TEMPERATURE (°C)
Figure 8. Normalized CTR vs. Ambient Temperature
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
7
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 14 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FODM8801A | High-Temperature Phototransistor Optocoupler | Fairchild Semiconductor |
FODM8801B | High-Temperature Phototransistor Optocoupler | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |