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부품번호 | BR93H76-WC 기능 |
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기능 | EEPROMs Microwire BUS | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
High Reliability Serial EEPROMs
High Reliability Series
EEPROMs Microwire BUS
BR93L□□-W Series, BR93A□□-WM Series, BR93H□□-WC Series
No.11001EGT03
ROHM's series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a
failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold
wires are used for internal connections, pushing the boundaries of reliability to the limit.
BR93L□□-W Series are assort 1Kbit~16Kbit. BR93A□□-WM Series are possible to operate at 105℃ and are assorted
with 1K~16Kbit. BR93H□□-WC Series are possible to operate at 125℃, are assorted with 2K~16Kbit.
Contents
BR93L□□-W Series
BR93L46-W, BR93L56-W, BR93L66-W, BR93L76-W, BR93L86-W
BR93A□□-WM Series
BR93A46-WM, BR93A56-WM, BR93A66-WM, BR93A76-WM, BR93A86-WM
・・・・P2
BR93H□□-WC Series
BR93H56-WC, BR93H66-WC, BR93H76-WC, BR93H86-WC
・・・P22
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© 2011 ROHM Co., Ltd. All rights reserved.
1/40
2011.09 - Rev.G
BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series
Technical Note
●Electrical characteristics
(Unless otherwise specified, VCC=2.5~5.5V, Ta=-40~+85℃, BR93L□□-W, Ta=-40~+105℃, BR93A□□-WM)
Parameter
Limits
Symbol
Min. Typ. Max.
Unit
Condition
“L” input voltage 1 VIL1 -0.3 - +0.8 V 4.0V≦VCC≦5.5V
“L” input voltage 2
VIL2 -0.3
- 0.2 x VCC V VCC≦4.0V
“H” input voltage 1
VIH1
2.0
-
VCC+0.3
V 4.0V≦VCC≦5.5V
“H” input voltage 2
VIH2
0.7 x VCC
-
VCC+0.3
V VCC≦4.0V
“L” output voltage 1
VOL1
0
- 0.4 V IOL=2.1mA, 4.0V≦VCC≦5.5V
“L” output voltage 2
VOL2
0
- 0.2 V IOL=100μA
“H” output voltage 1
VOH1
2.4
- VCC V IOH=-0.4mA, 4.0V≦VCC≦5.5V
“H” output voltage 2
VOH2
VCC-0.2
-
VCC
V IOH=-100μA
Input leak current ILI -1 - +1 µA VIN=0V~VCC
Output leak current
ILO
-1
-
+1 µA VOUT=0V~VCC, CS=0V
Current consumption
at action
ICC1
ICC2
ICC3
-
-
-
- 3.0 mA fSK=2MHz, tE/W=5ms (WRITE)
- 1.5 mA fSK=2MHz (READ)
- 4.5 mA fSK=2MHz, tE/W=5ms (WRAL, ERAL)
Standby current
ISB - - 2 µA CS=0V, DO=OPEN
◎Radiation resistance design is not made.
(Unless otherwise specified, VCC=1.8~2.5V, Ta=-40~+85℃, BR93L□□-W)
Parameter
Symbol
Min.
Limits
Typ.
Max.
Unit
“L” input voltage
VIL -0.3 - 0.2 x VCC V
“H” input voltage
VIH 0.7 x VCC - VCC+0.3 V
“L” output voltage
VOL
0
- 0.2 V
“H” output voltage
VOH VCC-0.2
-
VCC
V
Input leak current ILI -1 - +1 μA
Output leak current
ILO
-1
-
+1 μA
Current consumption
at action
ICC1
ICC2
ICC3
-
-
-
- 1.5 mA
- 0.5 mA
- 2 mA
Standby current
ISB - - 2 μA
◎Radiation resistance design is not made.
Condition
IOL=100μA
IOH=-100μA
VIN=0V~VCC
VOUT=0V~VCC, CS=0V
fSK=500kHz, tE/W=5ms (WRITE)
fSK=500kHz (READ)
fSK=500kHz, tE/W=5ms (WRAL, ERAL)
CS=0V, DO=OPEN
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© 2011 ROHM Co., Ltd. All rights reserved.
4/40
2011.09 - Rev.G
4페이지 BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series
●BR93L□□-W Characteristic data (The following characteristic data are Typ. values.)
Technical Note
Fig.17 Consumption current at WRAL action
ICC3 (WRAL, fSK=500kHz)
Fig.18 Consumption current at standby action ISB
Fig.19 SK frequency fSK
Fig.20 SK high time tSKH
Fig.21 SK low time tSKL
Fig.22 CS low time tCS
Fig.23 CS hold time tCSH
Fig.24 CS setup time tCSS
Fig.25 DI hold time tDIH
Fig.26 DI setup time tDIS
Fig.27 Data “0” output delay time tPD0
Fig.28 Output data “1” delay time tPD1
Fig.29 Time from CS to output establishment tSV
Fig.30 Time from CS to High-Z tDF
Fig.31 Write cycle time tE/W
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© 2011 ROHM Co., Ltd. All rights reserved.
7/40
2011.09 - Rev.G
7페이지 | |||
구 성 | 총 30 페이지수 | ||
다운로드 | [ BR93H76-WC.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BR93H76-W | Microwire BUSSerialEEPROMs | ROHM Semiconductor |
BR93H76-WC | EEPROMs Microwire BUS | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |