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NVD4813NH 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NVD4813NH은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 NVD4813NH 기능
기능 Power MOSFET ( Transistor )
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NVD4813NH 데이터시트, 핀배열, 회로
NTD4813NH, NVD4813NH
Power MOSFET
30 V, 40 A, Single NChannel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low RG
AECQ101 Qualified and PPAP Capable NVD4813NH
These Devices are PbFree and are RoHS Compliant
Applications
CPU Power Delivery
DCDC Converters
High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
9.0 A
TA = 85°C
7.0
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
1.94 W
7.6 A
5.9
1.27 W
40 A
31
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
35.3 W
90 A
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
TA = 25°C
IDmaxPkg
TJ,
TSTG
IS
dV/dt
35
55 to
+175
29
6
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 17.2 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
44.4 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 3
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
13 mW @ 10 V
25.9 mW @ 4.5 V
D
ID MAX
40 A
G
S
NCHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
4813NH = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD4813NH/D




NVD4813NH pdf, 반도체, 판매, 대치품
NTD4813NH, NVD4813NH
TYPICAL PERFORMANCE CURVES
80
10 V
70 8 V
60 6 V
TJ = 25°C
5V
50 4.5 V
40 4.2 V
4V
30 3.8 V
20 3.6 V
3.4 V
10 3.2 V
0 3V
0 2 4 6 8 10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
60
VDS 10 V
50
40
30
20
TJ = 125°C
10 TJ = 25°C
0 TJ = 55°C
0 246
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.04
0.03
ID = 30 A
TJ = 25°C
0.05
0.04
TJ = 25°C
0.02
0.03
0.02
VGS = 4.5 V
0.01
0 2 4 6 8 10 12
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance vs. GatetoSource
Voltage
0.01
VGS = 11.5 V
0
10 15 20 25 30 35 40 45 50 55 60
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.8
ID = 20 A
1.6 VGS = 10 V
10,000
VGS = 0 V
1.4 TJ = 150°C
1.2 1000
1.0
0.8 TJ = 100°C
0.6
50 25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
175
100
0
5 10 15 20 25 30
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
vs. Drain Voltage
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NVD4813NH 전자부품, 판매, 대치품
NTD4813NH, NVD4813NH
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA01
ISSUE B
L3
L4
b2
e
E
b3
4
12 3
AC
A
B c2
D
DETAIL A
H
bc
0.005 (0.13) M C
L2
GAUGE
PLANE
H
L
L1
DETAIL A
ROTATED 905 CW
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
Z
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
SEATING
PLANE
INCHES
DIM MIN MAX
A 0.086 0.094
A1 0.000 0.005
b 0.025 0.035
b2 0.030 0.045
b3 0.180 0.215
c 0.018 0.024
c2 0.018 0.024
D 0.235 0.245
E 0.250 0.265
e 0.090 BSC
H 0.370 0.410
L 0.055 0.070
L1 0.108 REF
L2 0.020 BSC
L3 0.035 0.050
L4 −−− 0.040
Z 0.155 −−−
MILLIMETERS
MIN MAX
2.18 2.38
0.00 0.13
0.63 0.89
0.76 1.14
4.57 5.46
0.46 0.61
0.46 0.61
5.97 6.22
6.35 6.73
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
−−− 1.01
3.93 −−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
3.00
0.118
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
1.60
0.063
6.17
0.243
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTD4813NH/D

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부품번호상세설명 및 기능제조사
NVD4813NH

Power MOSFET ( Transistor )

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