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부품번호 | AT27C512R 기능 |
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기능 | 512K (64K x 8) One-time Programmable Read-only Memory | ||
제조업체 | ATMEL Corporation | ||
로고 | |||
전체 13 페이지수
Features
• Fast read access time – 45ns
• Low-power CMOS operation
– 100µA max standby
– 20mA max active at 5MHz
• JEDEC standard packages
– 28-lead PDIP
– 32-lead PLCC
• 5V± 10% supply
• High-reliability CMOS technology
– 2,000V ESD protection
– 200mA latchup immunity
• Rapid programming algorithm – 100µs/byte (typical)
• CMOS- and TTL-compatible inputs and outputs
• Integrated product identification code
• Industrial and automotive temperature ranges
• Green (Pb/halide-free) packaging option
512K (64K x 8)
One-time
Programmable,
Read-only Memory
Atmel AT27C512R
1. Description
The Atmel® AT27C512R is a low-power, high-performance, 524,288-bit, one-time pro-
grammable, read-only memory (OTP EPROM) organized as 64K by 8 bits. It requires only
one 5V power supply in normal read mode operation. Any byte can be accessed in less than
45ns, eliminating the need for speed reducing WAIT states on high-performance micropro-
cessor systems.
The Atmel scaled CMOS technology provides high speed, lower active power consumption,
and significantly faster programming. Power consumption is typically only 8mA in active
mode and less than 10µA in standby mode.
The AT27C512R is available in a choice of industry-standard, JEDEC-approved, one-time
programmable (OTP) PDIP and PLCC packages. All devices feature two-line control (CE,
OE) to give designers the flexibility to prevent bus contention.
With 64K byte storage capability, the AT27C512R allows firmware to be stored reliably and
to be accessed by the system without the delays of mass storage media.
The AT27C512R has additional features to ensure high quality and efficient production use.
The rapid programming algorithm reduces the time required to program the part and guar-
antees reliable programming. Programming time is typically only 100µs/byte. The
integrated product identification code electronically identifies the device and manufacturer.
This feature is used by industry standard programming equipment to select the proper pro-
gramming algorithms and voltages.
0015P–EPROM–10/11
Table 5-3. DC and operating characteristics for read operation
Symbol
Parameter
Condition
Min Max Units
ILI
Input load current
VIN = 0V to VCC
Ind.
Auto.
±1 µA
±5 µA
ILO
Output leakage current
VOUT = 0V to VCC
Ind.
Auto.
±5 µA
±10 µA
ISB
ICC
VIL
VIH
VOL
VOH
Note:
VCC(1) standby current
VCC active current
Input low voltage
ISB1 (CMOS), CE = VCC 0.3V
ISB2 (TTL), CE = 2.0 to VCC 0.5V
f = 5MHz, IOUT = 0mA, CE = VIL
100 µA
1 mA
20 mA
-0.6 0.8
V
Input high voltage
2.0 VCC + 0.5
Output low voltage
IOL = 2.1mA
0.4
Output high voltage
IOH = -400µA
2.4
1. VCC must be applied simultaneously with or before OE/VPP, and removed simultaneously with or after OE/VPP.
V
V
V
Table 5-4. AC characteristics for read operation
Symbol
Parameter
Condition
tACC(1)
tCE(1)
tOE(1)
tDF(1)
Address to output delay
CE = OE/VPP = VIL
CE to output delay
OE/VPP = VIL
OE/VPP to output delay
CE = VIL
OE/VPP or CE high to output float, whichever occurred first
tOH
Note:
Output hold from address, CE or OE/VPP, whichever occurred first
1. See AC waveforms for read operation.
Atmel AT27C512R
-45 -70
Min Max Min Max
45 70
45 70
20 30
20 25
77
Units
ns
ns
ns
ns
ns
4 Atmel AT27C512R
0015P–EPROM–10/11
4페이지 Atmel AT27C512R
Table 5-6. DC programming characteristics
TA = 25 ± 5°C, VCC = 6.5 ± 0.25V, OE/VPP = 13.0 ± 0.25V
Symbol
ILI
VIL
VIH
VOL
VOH
ICC2
IPP2
VID
Parameter
Input load current
Input low level
Input high level
Output low voltage
Output high voltage
VCC supply current (program and verify)
OE/VPP current
A9 product identification voltage
Test conditions
VIN = VIL,VIH
IOL = 2.1mA
IOH = -400µA
CE = VIL
Limits
Min Max
±10
-0.6 0.8
2.0 VCC + 1
0.4
2.4
25
25
11.5 12.5
Units
µA
V
V
V
V
mA
mA
V
Table 5-7. AC programming characteristics
TA = 25 5°C, VCC = 6.5 0.25V, OE/VPP = 13.0 0.25V
Symbol
Parameter
Test conditions(1)
Limits
Min Max
Units
tAS
tOES
tOEH
tDS
tAH
tDH
tDFP
tVCS
tPW
tDV
tVR
tPRT
Notes:
Address setup time
2 µs
OE/VPP setup time
2 µs
OE/VPP hold time
Data setup time
Input rise and fall times
(10% to 90%) 20ns
2
2
µs
µs
Address hold time
Data hold time
CE high to output float delay(2)
Input pulse levels
0.45V to 2.4V
Input timing reference level
0 µs
2 µs
0 130 ns
VCC setup time
0.8V to 2.0V
2 µs
CE program pulse width(3)
Data valid from CE(2)
OE/VPP recovery time
95 105 µs
Output timing reference level
0.8V to 2.0V
1 µs
2 µs
OE/VPP pulse rise time during
programming
50 ns
1. VCC must be applied simultaneously with or before OE/VPP and removed simultaneously with or after OE/VPP.
2. This parameter is only sampled, and is not 100% tested. Output float is defined as the point where data is no longer driven.
See timing diagram.
3. Program pulse width tolerance is 100µsec±5%.
Table 5-8. The Atmel AT27C512R integrated product identification code
Codes
Manufacturer
Device type
Pins
A0 O7 O6 O5 O4 O3 O2 O1 O0 Hex data
000011110
1E
100001101
0D
0015P–EPROM–10/11
7
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부품번호 | 상세설명 및 기능 | 제조사 |
AT27C512 | 512K (64K x 8) UV Erasable CMOS EPROM | ATMEL Corporation |
AT27C512R | 512K (64K x 8) One-time Programmable Read-only Memory | ATMEL Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |