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PDF 2SC3149 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3149 | |
| Descripción | NPN Transistor | |
| Fabricantes | JIANGSU CHANGJIANG | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SC3149 TRANSISTOR (NPN)
FEATURES
z High breakdown voltage(VCBO>900V)
z Fast switching speed
z Wide ASO
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
900 V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC
Collector Current –Continuous
0.5
A
PC Collector Power Dissipation 2 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*pulse test.
CLASSIFICATION OF hFE1
Rank
K
Symbol
V(BR)CBO*
V(BR)CEO*
V(BR)EBO
ICBO
IEBO
hFE1*
hFE2*
VCE(sat) *
VBE(sat) *
fT
Cob
ton
tstg
tf
Test conditions
IC=1mA,IE=0
IC=5mA,IB=0
IE=1mA,IC=0
VCB=800V,IE=0
VEB=5V,IC=0
VCE=5V,IC=100mA
VCE=5V,IC=200mA
IC=200mA,IB=40mA
IC=200mA,IB=40mA
VCE=10V, IC=-100mA
VCB=10V, IE=0,f =1MHz
IC=1A,IB1=0.2A,IB2=-0.4A,
RL=400Ω,VCC=400V
Min
900
800
7
10
8
L
Range
10-20
15-30
Typ Max Unit
V
V
V
10 μA
10 μA
40
1V
1.5 V
15 MHz
30 pF
1.0 μS
3.0 μS
0.7 μS
M
20-40
A,Jan,2012
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC3149.PDF ] | |
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