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8N80C 데이터시트 PDF




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부품번호 8N80C 기능
기능 FQP8N80C
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8N80C 데이터시트, 핀배열, 회로
December 2013
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU
N-Channel QFET® MOSFET
800 V, 8.0 A, 1.55
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V,
ID = 4.0 A
• Low Gate Charge (Typ. 35 nC)
• Low Crss (Typ. 13 pF)
• 100% Avalanche Tested
D
GDS
TO-220 GDS
D
G
TO-220F
S
G
TO-220F
Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQP8N80C FQPF8N80C
800
8 8*
5.1 5.1 *
32 32 *
± 30
850
8
17.8
4.5
178 59
1.43 0.48
-55 to +150
300
S
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP8N80C
0.89
0.5
62.5
FQPF8N80C
2.66
--
62.5
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
1
www.fairchildsemi.com




8N80C pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes:
1.
2.
VGS
ID =
=0V
250 μ
A
0.8
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101 1 ms
10 ms
DC
100
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9-1. Maximum Safe Operating Area
for FQP8N80C
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 4.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
101 100 µs
1 ms
10 ms
100 DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9-2. Maximum Safe Operating Area
for FQPF8N80C
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
4
www.fairchildsemi.com

4페이지










8N80C 전자부품, 판매, 대치품
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D
=
--G--a--t-e--P---u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
7
www.fairchildsemi.com

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