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PDF SVF2N60M Data sheet ( Hoja de datos )
| Número de pieza | SVF2N60M | |
| Descripción | 600V N-CHANNEL MOSFET | |
| Fabricantes | SL | |
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SVF2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-cellTM structure DMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No.
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60DTR
Package Type
TO-251-3L
TO-220F-3L
TO-220-3L
TO-252-2L
TO-252-2L
Marking
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60D
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
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Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 1 of 10
1 page  
SVF2N60M/F/T/D_Datasheet
TYPICAL CHARACTERISTICS (CONTINUED)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SVF2N60M.PDF ] | |
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