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PDF SSS4N60 Data sheet ( Hoja de datos )
| Número de pieza | SSS4N60 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Technology co.,Ltd SSS4N60
4 Amps，600Volts
N-CHANNEL MOSFET
■ DESCRIPTION
The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics,
such as fast switching time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies .PWM motor controls, high efficient DC to
.DC converters and bridge circuits
■ FEATURES
● RDS(ON)=2.5Ω@VGS=10V
● Ultra Low gate charge(tupical 15.0nC)
● Low reverse transfer capacitance(CRSS=typica8.0pF)
● Fast switching capability
● Avalanche energy specified
● Improved dv/dt capability,high ruggedness
■ SYMBOL
4N60
■ ORDERING INF ORMATION
Order Number
Normal
Lead Free Plating
4N60-TA3-T
4N60L-TA3-T
4N60-TF3-T
4N60L-TF3-T
4N60-TM3-T
4N60L-TM3-T
4N60-TN3-R
4N60L-TN3-R
4N60-TN3-T
4N60L-TN3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
Package
TO-220
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
12
3
GD
S
GD
S
GD
S
GD
S
GD
S
Packing
Tube
Tube
Tube
Tape Reel
Tube
4N60L-TA3-T
(1)T:Tube,R:Tape Reel
（1）Packing Type
（2）Package Type
（3）Lead Plating
(2)TA3:TO220,TF3:TO-220F,TM3:TO-251,TN3:TO-252
(3)L:Lead Free Plating Blank：Pb/Sn
■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless otherwise specified)
PARAMETER
SYMBOL
PATINGS
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current(Note 2)
Drain Currenet
Tc=25℃
Continuous
VDSS
VGSS
IAP
ID
600
±30
4.4
4.0
Drain Current Pulsed(Note 2)
IDP 16
UNIT
V
V
A
A
A
1
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS4N60
■ TYPICAL CHARACTERISTICS(cont)
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSS4N60.PDF ] | |
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