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PDF 7MBR50SB120-50 Data sheet ( Hoja de datos )
| Número de pieza | 7MBR50SB120-50 | |
| Descripción | Power Integrated Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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SPECIFICATION
Device Name : Power Integrated Module
Type Name
(RoHS compliant product)
: 7MBR50SB120-50
Spec. No. : MS6M 0872
Apr. 26 ‘05 K.Muramatsu
Apr. 26 ‘05 S.Ogawa T.Hosen
K.Yamada
MS6M0872
1a
16
H04-004-07b
1 page  
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Characteristics
Items
Symbols
Conditions
min. typ. Max. Units
Zero gate voltage
Collector current
ICES VGE =
0 V, VCE = 1200 V
-
- 1.0 mA
Gate-Emitter leakage current
IGES VCE =
0 V, VGE = ±20 V
-
- 200 nA
Gate-Emitter
threshold voltage
VGE(th) VCE = 20 V, Ic =
50 mA 5.5 7.2 8.5 V
Collector-Emitter
VCE(sat) VGE = 15 V, chip
- 2.1 - V
saturation voltage
Ic = 50 A terminal
- 2.3 2.7
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage
Collector current
Gate-Emitter leakage current
Collector-Emitter
saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
Cies
ton
tr
tr(i)
toff
tf
VF
trr
VGE =
f=
Vcc=
Ic =
VGE =
RG =
IF =
IF =
0 V, VCE =
1 MHz
600 V
50 A
±15 V
24 Ω
10 V
50 A chip
terminal
50 A
ICES VGE =
0 V, VCE = 1200 V
IGES VCE =
0 V, VGE = ±20 V
VCE(sat) VGE = 15 V, chip
Ic = 25 A terminal
ton Vcc= 600 V
tr Ic =
25 A
toff VGE = ±15 V
tf RG = 51 Ω
IRRM VR = 1200 V
VFM IF =
50 A chip
terminal
IRRM VR = 1600 V
R T = 25℃
T =100℃
- 6000 - pF
- 0.35 1.2
- 0.25 0.6
- 0.1 - μs
- 0.45 1.0
- 0.08 0.3
- 2.3 - V
- 2.5 3.3
- - 350 ns
- - 1.0 mA
- - 200 nA
- 2.1 - V
- 2.25 2.7
- 0.35 1.2
- 0.25 0.6 μs
- 0.45 1.0
- 0.08 0.3
- - 1.0 mA
- 1.1 - V
- 1.2 1.5
- - 1.0 mA
- 5000 -
Ω
465 495 520
B value
B T = 25/50℃
3305 3375 3450 K
5. Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
min. typ. Max. Units
Inverter IGBT
- - 0.35
Thermal resistance
Rth(j-c) Inverter FWD
- - 0.75 ℃/Ｗ
(1 device)
Brake IGBT
- - 0.69
Converter Diode
- - 0.50
Contact Thermal resistance
Rth(c-f) with Thermal Compound (※)
- 0.05 - ℃/Ｗ
※ This is the value which is defined mounting on the additional cooling fin with thermal compound.
MS6M0872
5a
16
H04-004-03a
5 Page 
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25℃ (typ.)
120
VGE= 20V 15V 12V
100
80
60 10V
40
20
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
120
Tj= 25℃
Tj= 125℃
100
80
60
40
20
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage
VGE=0V, f= 1MHz, Tj= 25℃
20000
(typ.)
10000
Cies
1000
Coes
Cres
100
0
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125℃ (typ.)
120
VGE= 20V 15V 12V
100
80
10V
60
40
20
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25℃ (typ.)
10
8
6
4
2
0
5
1000
Ic= 100A
Ic= 50A
Ic= 25A
10 15 20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=50A, Tj= 25℃
25
25
800 20
600 15
400 10
200 5
00
0 100 200 300 400 500
Gate charge : Qg [ nC ]
MS6M0872
11 a
16
H04-004-03a
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet 7MBR50SB120-50.PDF ] | |
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