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IRFP4768PbF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRFP4768PbF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IRFP4768PbF 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


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IRFP4768PbF 데이터시트, 핀배열, 회로
PD - 97379
IRFP4768PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
250V
RDS(on) typ.
14.5m
G max. 17.5m
S ID
93A
G
G ate
D
S
D
G
TO-247AC
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy d
IAR Avalanche Current c
EAR Repetitive Avalanche Energy c
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case ij
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
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Max.
93
66
370
520
3.4
± 20
24
-55 to + 175
300
10lbfxin (1.1Nxm)
770
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
02/26/09




IRFP4768PbF pdf, 반도체, 판매, 대치품
IRFP4768PbF
1000
100 TJ = 175°C
10 TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
100 TJ = 175°C
10 TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
Fig 9. Maximum Drain Current vs.
Case Temperature
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-50 0 50 100 150 200 250 300
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10msec
10 DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
320
Id = 5mA
300
280
260
240
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
3200
2800
2400
2000
ID
TOP
12A
17A
BOTTOM 56A
1600
1200
800
400
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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IRFP4768PbF 전자부품, 판매, 대치품
IRFP4768PbF
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduuccttor Currerennt t
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 22a. Unclamped Inductive Test Circuit
VDS
RD
VGS
RG
D.U.T.
+
-
VDD
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 23a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
www.irf.com
IAS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 24b. Gate Charge Waveform
7

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