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PDF 15N95K5 Data sheet ( Hoja de datos )
| Número de pieza | 15N95K5 | |
| Descripción | STP15N95K5 | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF15N95K5, STP15N95K5,
STW15N95K5
N-channel 950 V, 0.41 Ω typ., 12 A SuperMESH™ 5
Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
Features
3
2
1
TO-220FP
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Order codes VDS RDS(on)max ID
PTOT
STF15N95K5
STP15N95K5 950 V
STW15N95K5
0.5 Ω
30 W
12 A
170 W
• TO-220 worldwide best RDS(on)
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
Order codes
STF15N95K5
STP15N95K5
STW15N95K5
Table 1. Device summary
Marking
Package
15N95K5
15N95K5
15N95K5
TO-220FP
TO-220
TO-247
February 2014
This is information on a product in full production.
DocID025280 Rev 2
Packaging
Tube
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18
1 page  
STF15N95K5, STP15N95K5, STW15N95K5
Electrical characteristics
Symbol
Table 6. Switching times
Parameter
Test conditions
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 475 V, ID = 6 A,
RG=4.7 Ω, VGS=10 V
(see Figure 22)
Min. Typ. Max. Unit
- 23 - ns
- 20 - ns
- 62 - ns
- 11 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
ISD
ISDM
(1)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD= 12 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 12 A, VDD= 60 V
di/dt = 100 A/μs,
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 12 A,VDD= 60 V
di/dt=100 A/μs,
Tj=150 °C(see
Figure 21)
1. Pulsed: pulse duration = 300μs, duty cycle 1.5%
Min. Typ. Max. Unit
12 A
-
48 A
- 1.5 V
- 444
-7
ns
μC
- 32
A
- 630
- 9.2
ns
μC
- 29
A
Symbol
Table 8. Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS= ± 1 mA, ID= 0
30 - - V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
DocID025280 Rev 2
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5 Page 
STF15N95K5, STP15N95K5, STW15N95K5
Package mechanical data
Figure 25. TO-220FP drawing
DocID025280 Rev 2
7012510_Rev_K_B
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| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet 15N95K5.PDF ] | |
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