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부품번호 | STP15N95K5 기능 |
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기능 | N-channel Power MOSFETs | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 18 페이지수
STF15N95K5, STP15N95K5,
STW15N95K5
N-channel 950 V, 0.41 Ω typ., 12 A SuperMESH™ 5
Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
Features
3
2
1
TO-220FP
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Order codes VDS RDS(on)max ID
PTOT
STF15N95K5
STP15N95K5 950 V
STW15N95K5
0.5 Ω
30 W
12 A
170 W
• TO-220 worldwide best RDS(on)
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
Order codes
STF15N95K5
STP15N95K5
STW15N95K5
Table 1. Device summary
Marking
Package
15N95K5
15N95K5
15N95K5
TO-220FP
TO-220
TO-247
February 2014
This is information on a product in full production.
DocID025280 Rev 2
Packaging
Tube
1/18
www.st.com
18
Electrical characteristics
STF15N95K5, STP15N95K5, STW15N95K5
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
Drain-source breakdown
V(BR)DSS voltage
ID = 1 mA, VGS= 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source
on-resistance
VDS = 950 V,
VDS = 950 V, Tc=125 °C
VGS = ± 20 V
VDS = VGS, ID = 100 μA
VGS = 10 V, ID= 6 A
Min. Typ. Max. Unit
950 V
1 μA
50 μA
±10 μA
34 5V
0.41 0.50 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 855 -
VDS =100 V, f=1 MHz, VGS=0
-
-
65
1
pF
pF
pF
(1)
Co(tr)
(2)
Co(er)
Equivalent capacitance time
related
Equivalent capacitance
VGS = 0, VDS = 0 to 760 V
energy related
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz open drain
VDD = 760 V, ID = 12 A
VGS =10 V
(see Figure 20)
- 104 - pF
- 38 - pF
-6 -Ω
- 30 - nC
- 5 - nC
- 22 - nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/18 DocID025280 Rev 2
4페이지 STF15N95K5, STP15N95K5, STW15N95K5
Electrical characteristics
Figure 8. Output characteristics
ID(A)
25
VGS=10, 11V
AM18030v1
9V
20
Figure 9. Transfer characteristics
ID
(A)
VDS=20V
25
AM18031v1
20
15 8V 15
10
7V
5
6V
0
0 5 10 15 20 VDS(V)
10
5
0
5 6 7 8 9 10 VGS(V)
Figure 10. Gate charge vs gate-source voltage
VGS
(V)
12
VDS
10
8
VDD=760 V
ID=12 A
AM18032v1 VDS
(V)
800
700
600
500
6 400
300
4
200
2 100
00
0 5 10 15 20 25 30 Qg(nC)
Figure 11. Static drain-source on-resistance
RDS(on)
(Ω)
0.8
VGS=10V
AM18033v1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2 4 6 8 10 ID(A)
Figure 12. Capacitance variations
C
(pF)
AM18034v1
1000
Ciss
Figure 13. Output capacitance stored energy
Eoss
(µJ)
14
AM18035v1
12
100
10
1
0.1
0.1
1
Coss
Crss
10 100 VDS(V)
10
8
6
4
2
0
0 200 400 600 800 VDS(V)
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7/18
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부품번호 | 상세설명 및 기능 | 제조사 |
STP15N95K5 | N-channel Power MOSFETs | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |