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PDF NTTFS4C05NTWG Data sheet ( Hoja de datos )
| Número de pieza | NTTFS4C05NTWG | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTTFS4C05N
Power MOSFET
30 V, 75 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
19.4
14.5
2.16
V
V
A
W
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 85°C
ID
28 A
21
Power Dissipation
TA = 25°C
PD
4.5 W
RqJA ≤ 10 s (Note 1)
Steady
Continuous Drain
Current RqJA (Note 2)
State
TA = 25°C
TA = 85°C
ID
12.0 A
8.9
Power Dissipation
RqJA (Note 2)
TA = 25°C PD 0.82 W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
ID
75 A
56
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
33 W
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
174 A
Operating Junction and Storage Temperature
TJ, −55 to °C
Tstg +150
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
30 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 41 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
EAS
84 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 29 A, EAS = 42 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
3.6 mW @ 10 V
5.1 mW @ 4.5 V
ID MAX
75 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C05 D
S AYWWG D
GGD
4C05
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C05NTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
NTTFS4C05NTWG WDFN8 5000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 1
1
Publication Order Number:
NTTFS4C05N/D
1 page  
NTTFS4C05N
TYPICAL CHARACTERISTICS
3000
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
td(on)
tr
tf
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100 10 ms
100 ms
10 1 ms
1 0 V < VGS < 10 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
0.01 Package Limit
0.01 0.1
1
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
QT
8
6
4 Qgs
Qgd
2
TJ = 25°C
VDD = 15 V
VGS = 10 V
0 ID = 30 A
0 4 8 12 16 20 24 28 32
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16
14
12
10
8
6
4 TJ = 125°C
2
TJ = 25°C
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
45
40 ID = 29 A
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTTFS4C05NTWG.PDF ] | |
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