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PDF TSC966CT Data sheet ( Hoja de datos )
| Número de pieza | TSC966CT | |
| Descripción | NPN Silicon Planar High Voltage Transistor | |
| Fabricantes | Taiwan Semiconductor | |
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TSC966
NPN Silicon Planar High Voltage Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
SOT-223
Pin Definition: PRODUCT SUMMARY
1. Base
2. Collector
3. Emitter
BVCBO
BVCEO
600V
400V
IC 300mA
VCE(SAT)
0.5V @ IC / IB = 50mA / 5mA
Features
● High BVceo, BVcbo
● High current gain
Structure
● Epitaxial Planar Type
Ordering Information
Part No.
Package
Packing
TSC966CT B0
TO-92
1Kpcs / Bulk
TSC966CT A3
TO-92
2Kpcs / Ammo
TSC966CW RPG SOT-223 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
VCBO
VCES
VCEO
VEBO
IC
Total Power Dissipation @ TA=25oC
TO-92
SOT-223
Ptot
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TSTG
Limit
600
600
400
7
0.3
1
0.9
1
+150
- 55 to +150
Unit
V
V
V
V
A
W
oC
oC
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
IC = 50uA
IC = 100uA, VBE= 0
IC = 1mA
IE = 50uA
VCB = 600V
VCE = 400V
VEB = 7V
IC = 50mA, IB = 5mA
IC = 50mA, IB = 5mA
VCE = 5V, IC = 1mA
VCE = 5V, IC = 20mA
VCE = 10V, IE= 20mA
VCB = 20V, f=1MHz
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICEO
IEBO
VCE(SAT)
VBE(SAT)
hFE 1
hFE 2
fT
Cob
Min Typ Max Unit
600 -- -- V
600 -- -- V
400 -- -- V
7 -- -- V
-- -- 0.5 uA
-- -- 1 uA
-- -- 1.5 uA
-- -- 0.5 V
-- -- 1 V
100 --
--
90 -- 300
50 --
-- MHz
-- -- 7 pF
1/5 Version: D12
1 page  
TSC966
NPN Silicon Planar High Voltage Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5 Version: D12
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TSC966CT.PDF ] | |
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