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PDF TSF2080C Data sheet ( Hoja de datos )

Número de pieza TSF2080C
Descripción Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! TSF2080C Hoja de datos, Descripción, Manual

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TSF2080C
Taiwan Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per
JESD 22-B102
Polarity: As marked
Mounting torque: 5 in-lbs. max.
Weight: 1.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TSF2080C
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
VRRM
IF(AV)
80
20
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
100
Peak repetitive reverse surge current (Note 1)
Non-repetitive avalanche energy at L=60mH, per diode
Voltage rate of change (Rated VR)
Isolation voltage from terminal to heatsink t = 1 min
Breakdown voltage ( IR =1.0mA )
Instantaneous forward voltage
per diode ( Note2 )
IF = 5A
IF = 10A
IF = 5A
IF = 10A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance (Note 3)
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Operating junction temperature range
Storage temperature range
Note 1: 2.0μs Pulse width, f=1.0KHz
Note 2: Pulse test with pulse width=300μs, 1% duty cycle
Note 3: Mount on heatsink size of 4in x 6in x 0.25in Al-plate
IRRM
EAS
dV/dt
VAC
VBR
VF
VF
IR
RθJC
TJ
TSTG
MIN.
80
-
-
-
-
-
-
0.5
110
10000
1500
TYP.
-
0.52
0.67
0.48
0.62
20
10
5
- 55 to + 150
- 55 to + 150
MAX.
-
-
0.77
-
0.70
600
20
UNIT
V
A
A
A
mJ
V/μs
V
V
V
μA
mA
OC/W
OC
OC
Document Number: DS_D1309047
Version:B13

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