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PDF TSM10N80 Data sheet ( Hoja de datos )

Número de pieza TSM10N80
Descripción 800V N-Channel Power MOSFET
Fabricantes Taiwan Semiconductor 
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No Preview Available ! TSM10N80 Hoja de datos, Descripción, Manual

TO-220
TSM10N80
800V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)()
800 1.05 @ VGS =10V
ID (A)
9.5
General Description
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic
lamp ballast based on half bridge.
Features
Low RDS(ON) 1.05(Max.)
Low gate charge typical @ 53nC (Typ.)
Improve dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM10N80CZ C0
TSM10N80CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pc / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
VDS
VGS
ID
IDM
Peak Diode Recovery dv/dt (Note 3)
dv/dt
Single Pulse Avalanche Energy (Note 2)
EAS
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
IAR
EAR
TJ
TSTG
Limit
800
±30
9.5
38
4.5
267
9.5
29
150
-55 to +150
Unit
V
V
A
A
V
mJ
A
mJ
ºC
oC
1/10 Version: B13

1 page




TSM10N80 pdf
TSM10N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
5/10 Version: B13

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