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PDF TSM10P06 Data sheet ( Hoja de datos )
| Número de pieza | TSM10P06 | |
| Descripción | 60V P-Channel MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TSM10P06
60V P-Channel MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDSON (mΩ)
170 @ VGS = -10V
-60
220 @ VGS = -4.5V
ID (A)
-5
-2
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No.
Package
Packing
TSM10P06CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
P-Channel MOSFET
Absolute Maximum Rating (TA = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Total Power Dissipation @ TC=25C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
EAS
IAS
PDTOT
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol
RӨJC
RӨJA
Limit
-60
±20
-10
-20
-10
5
-10
37
+150
- 55 to +150
Limit
4
70
Unit
V
V
A
A
A
mJ
A
W
oC
oC
Unit
oC/W
oC/W
1/4 Version: B13
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TSM10P06.PDF ] | |
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