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Número de pieza | TSM19N20 | |
Descripción | 200V N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM19N20 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM19N20
200V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
200 92 @ VGS =10V
ID (A)
18
Features
● Advanced Trench Technology
● Low RDS(ON) 92mΩ (Max.)
● Low gate charge typical @ 55nC (Typ.)
● Low Crss typical @ 73pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM19N20CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Drain Current Pulsed (Note 1)
Avalanche Current
Avalanche Energy, L=10mH
Maximum Power Dissipation @ TC=25°C
Storage Temperature Range
Operating Junction Temperature Range
* Limited by maximum junction temperature
VDS
VGS
ID
IDM
IAS
EAS
PD
TSTG
TJ
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJC
RӨJA
Limit
200
±20
18
72
8
320
48
-55 to +150
-55 to +150
Limit
2.6
50
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
oC/W
oC/W
1/4 Version: A12
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet TSM19N20.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM19N20 | 200V N-Channel Power MOSFET | Taiwan Semiconductor |
TSM19N20CP | 200V N-Channel Power MOSFET | Taiwan Semiconductor |
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