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Número de pieza | TSM1NB60CW | |
Descripción | 600V N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM1NB60CW (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! TO-251
(IPAK)
TSM1NB60
600V N-Channel Power MOSFET
TO-252
(DPAK)
SOT-223
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 10 @ VGS =10V
ID (A)
0.5
General Description
The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced
technology has been especially tailored to minimize on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and commutation mode.
Features
● Low RDS(ON) 8Ω (Typ.)
● Low gate charge typical @ 6.1nC (Typ.)
● Low Crss typical @ 4.2pF (Typ.)
Block Diagram
Ordering Information
Part No.
Package
TSM1NB60CH C5G TO-251
TSM1NB60CP ROG TO-252
TSM1NB60CW RPG SOT-223
Note: “G” denotes for Halogen Free
Packing
75pcs / Tube
2.5Kpcs / 13” Reel
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc = 25ºC
Tc = 100ºC
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation @ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Note: Limited by maximum junction temperature
VDS
VGS
ID
IDM
EAS
dv/dt
PTOT
TJ
TSTG
IPAK
39
Limit
DPAK
600
±30
1
0.7
4
5
4.5
39
150
-55 to +150
SOT-223
2.1
Unit
V
V
A
A
A
mJ
V/ns
W
ºC
oC
1/8 Version: A12
1 page TSM1NB60
600V N-Channel Power MOSFET
TO-251 Mechanical Drawing
TO-251 DIMENSION
MILLIMETERS
DIM
MIN MAX
INCHES
MIN MAX
A 2.10 2.50
0.083
0.098
b 0.65 1.05
0.026
0.041
b1 0.58 0.62
0.023
0.024
b2 4.80 5.20
0.189
0.205
b3 0.68 0.72
0.027
0.028
C 0.35 0.65
0.014
0.026
C1 0.40 0.60
0.016
0.024
D 5.30 5.70
0.209
0.224
E 6.30 6.70
0.248
0.264
e 2.30 BSC
0.09 BSC
L 7.00 8.00
0.276
0.315
L1 1.40 1.80
0.055
0.071
L2 1.30 1.70
0.051
0.067
L3 0.50 0.90
0.020
0.035
5/8 Version: A12
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet TSM1NB60CW.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM1NB60CH | 600V N-Channel Power MOSFET | Taiwan Semiconductor |
TSM1NB60CP | 600V N-Channel Power MOSFET | Taiwan Semiconductor |
TSM1NB60CW | 600V N-Channel Power MOSFET | Taiwan Semiconductor |
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