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PDF TSM35N10CP Data sheet ( Hoja de datos )
| Número de pieza | TSM35N10CP | |
| Descripción | 100V N-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM35N10
100V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
100 37 @ VGS =10V
ID (A)
32
Features
● Advanced Trench Technology
● Low RDS(ON) 37mΩ (Max.)
● Low gate charge typical @ 34nC (Typ.)
● Low Crss typical @ 45pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM35N10CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed Note 1
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
TC=25°C
TC=70°C
TA=25°C
TA=70°C
TC=25°C
TC=70°C
TA=25°C
TA=70°C
VDS
VGS
ID
IDM
IAS, IAR
EAS, EAR
PD
TSTG
TJ
* Limited by maximum junction temperature
Limit
100
±20
32
26
5
4
70
35
61
83.3
53.3
2
1.3
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨJC
RӨJA
Limit
1.5
62
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
oC/W
oC/W
1/6 Version: B13
1 page  
TSM35N10
100V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6 Version: B13
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM35N10CP.PDF ] | |
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