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PDF TSM3N80CZ Data sheet ( Hoja de datos )
| Número de pieza | TSM3N80CZ | |
| Descripción | 800V N-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TSM3N80
800V N-Channel Power MOSFET
TO-220
TO-251
(IPAK)
ITO-220
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
800 4.2 @ VGS =10V
ID (A)
1.5
General Description
The TSM3N80 N-Channel Power MOSFET is
produced by new advance planar process. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
Features
● Low RDS(ON) 3.3Ω (Typ.)
● Low gate charge typical @ 19nC (Typ.)
● Low Crss typical @ 10.2pF (Typ.)
● Improved dv/dt capability
Block Diagram
Ordering Information
Part No.
Package
TSM3N80CH C5G
TO-251
TSM3N80CP ROG
TO-252
TSM3N80CZ C0
TO-220
TSM3N80CI C0
ITO-220
Note: “G” denotes for Halogen Free
Packing
75pcs / Tube
2.5Kpcs / 13” Reel
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Limit
Symbol
IPAK/DPAK ITO-220
Drain-Source Voltage
VDS 800
Gate-Source Voltage
Continuous Drain Current
Tc = 25ºC
Tc = 100ºC
VGS
ID
±30
3
1.83
Pulsed Drain Current *
IDM 12
Single Pulse Avalanche Energy (Note 2)
EAS
48
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
IAR
EAR
3
9.4
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
Total Power Dissipation @ TC = 25oC
PTOT
94
32
Operating Junction Temperature
TJ
150
Storage Temperature Range
Note: Limited by maximum junction temperature
TSTG
-55 to +150
TO-220
94
Unit
V
V
A
A
A
mJ
A
mJ
V/ns
W
ºC
oC
1/12
Version: C13
1 page  
TSM3N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
5/12
Version: C13
5 Page 
TSM3N80
800V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
11/12
Version: C13
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TSM3N80CZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TSM3N80CH | 800V N-Channel Power MOSFET | Taiwan Semiconductor |
| TSM3N80CI | 800V N-Channel Power MOSFET | Taiwan Semiconductor |
| TSM3N80CP | 800V N-Channel Power MOSFET | Taiwan Semiconductor |
| TSM3N80CZ | 800V N-Channel Power MOSFET | Taiwan Semiconductor |
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