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PDF TSM4N80CZ Data sheet ( Hoja de datos )
| Número de pieza | TSM4N80CZ | |
| Descripción | 800V N-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
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TO-220
TSM4N80
800V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
800 3 @ VGS =10V
ID (A)
4
General Description
The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low RDS(ON) 3Ω (Max.)
● Low gate charge typical @ 25nC (Typ.)
● Improve dv/dt capability
Ordering Information
Part No.
TSM4N80CZ C0
TSM4N80CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
TO-220
ITO-220
Drain-Source Voltage
VDS 800
Gate-Source Voltage
Continuous Drain Current
Tc = 25oC
Tc = 100oC
VGS ±30
4
ID 2.5
4*
2.5 *
Pulsed Drain Current *
Peak Diode Recovery dv/dt (Note 3)
IDM
dv/dt
16 16 *
4.5
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
Tc = 25oC
Derate above 25℃
EAS
IAR
EAR
PD
123
0.98
85
4
12.3
38.7
0.3
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
TJ
TSTG
150
-55 to +150
Unit
V
V
A
A
V
mJ
A
mJ
W
ºC/W
ºC
oC
1/10 Version: C13
1 page  
TSM4N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
5/10 Version: C13
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TSM4N80CZ.PDF ] | |
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