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Número de pieza | TSM4N90CZ | |
Descripción | 900V N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
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No Preview Available ! TO-220
TSM4N90
900V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
900 4 @ VGS =10V
ID (A)
4
General Description
The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low RDS(ON) 4Ω (Max.)
● Low gate charge typical @ 25nC (Typ.)
● Improve dv/dt capability
Ordering Information
Part No.
Package
Packing
TSM4N90CZ C0
TO-220
50pcs / Tube
TSM4N90CI C0G
ITO-220
50pcs / Tube
Note: “G” denote for Halogen Free Product
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
TO-220
ITO-220
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc = 25oC
Tc = 100oC
VDS 900
VGS ±30
4
ID
2.2
4*
2.2 *
Pulsed Drain Current *
Peak Diode Recovery dv/dt (Note 3)
IDM
dv/dt
16 16 *
4.5
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
Tc = 25oC
Derate above 25℃
EAS
IAR
EAR
PD
123
0.98
474
4
12.3
38.7
0.3
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
TJ
TSTG
150
-55 to +150
Unit
V
V
A
A
V
mJ
A
mJ
W
ºC/W
ºC
oC
1/10 Version: B13
1 page TSM4N90
900V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220)
5/10 Version: B13
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet TSM4N90CZ.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM4N90CI | 900V N-Channel Power MOSFET | Taiwan Semiconductor |
TSM4N90CZ | 900V N-Channel Power MOSFET | Taiwan Semiconductor |
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