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PDF MJE13009 Data sheet ( Hoja de datos )
| Número de pieza | MJE13009 | |
| Descripción | NPN Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
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MJE13009
Preferred Device
SWITCHMODEt Series
NPN Silicon Power
Transistors
The MJE13009 is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
• VCEO(sus) 400 V and 300 V
• Reverse Bias SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A,
100_C is 120 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
Value
400
700
9
12
24
6
12
18
36
2
16
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD 100 W
800 W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to
+150
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Thermal Resistance, Junction−to−Case
RqJC
1.25 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
275 _C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
1
http://onsemi.com
12 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 100 WATTS
123
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
MJE13009G
AY WW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13009
TO−220
50 Units / Rail
MJE13009G
TO−220
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJE13009/D
1 page  
MJE13009
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
5V
PW
DUTY CYCLE ≤ 10% 68
tr, tf ≤ 10 ns
+5 V
0.001 mF
1N4933 33
MJE210
33 1N4933
2N2222
1
k
1
+5 Vk
RB
IB
VCC
L
IC
1N4933
NOTE
0.02 mF 270
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
1k
2N2905
47 100
1/2 W
D.U.T.
MJE200
− VBE(off)
MR826*
Vclamp
*SELECTED FOR ≥ 1 kV
5.1 k
VCE
51
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200 mH/20 A
Lcoil = 200 mH
IC
ICM
t1
VCE
VCEM
TIME
OUTPUT WAVEFORMS
tf CLAMPED
tf UNCLAMPED ≈ t2
t
tf
t1 ADJUSTED TO
OBTAIN IC
t1 ≈
Lcoil (ICM)
VCC
Vclamp
t2
t2 ≈
Lcoil (ICM)
Vclamp
VCC = 20 V
Vclamp = 300 Vdc
Test Equipment
Scope−Tektronics
475 or Equivalent
RESISTIVE
SWITCHING
+125 V
RC
TUT
RB SCOPE
D1
−4.0
V
VCC = 125 V
RC = 15 W
D1 = 1N5820 or Equiv.
RB = W
+10 V
25 ms
0
−8 V
tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
http://onsemi.com
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